- 您现在的位置：买卖IC网 > PDF目录371732 > FF500R25KF1 IGBT Module PDF资料下载
参数资料
| 型号： | FF500R25KF1 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模块 |
| 文件页数： | 2/9页 |
| 文件大小： | 109K |
| 代理商： | FF500R25KF1 |
Technische Information / Technical Information
FF 500 R 25 KF1
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 500A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 25°C,
t
d,on
-
1,4
-
μs
V
GE
= ±15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 125°C,
-
1,5
-
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 500A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 25°C,
t
r
-
0,25
-
μs
V
GE
= ±15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 125°C,
-
0,25
-
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 500A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 25°C,
t
d,off
-
2,2
-
μs
V
GE
= ±15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 125°C,
-
2,2
-
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 500A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 25°C,
t
f
-
0,2
-
μs
V
GE
= ±15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 125°C,
-
0,2
-
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 500A, V
CE
= 1200V, V
GE
= ±15V
R
G
= 2,7
, C
GE
=68nF, T
vj
= 125°C , L
S
= 60nH
E
on
-
700
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 500A, V
CE
= 1200V, V
GE
= ±15V
R
G
= 5,6
, C
GE
=68nF, T
vj
= 125°C , L
S
= 60nH
E
off
-
500
-
mWs
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V
T
Vj
≤
125°C, V
CC
=1200V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
-
200
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
25
-
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
R
CC′+EE′
-
0,37
-
m
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 500A, V
GE
= 0V, T
vj
= 25°C
V
F
-
2,3
2,7
V
I
F
= 500A, V
GE
= 0V, T
vj
= 125°C
-
2,3
2,7
V
Rückstromspitze
peak reverse recovery current
I
F
= 500A, - di
F
/dt = 2000A/μs
V
R
= 1200V, VGE = -10V, T
vj
= 25°C
I
RM
-
480
-
A
V
R
= 1200V, VGE = -10V, T
vj
= 125°C
-
500
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 500A, - di
F
/dt = 2000A/μs
V
R
= 1200V, VGE = -10V, T
vj
= 25°C
Q
r
-
260
-
μAs
V
R
= 1200V, VGE = -10V, T
vj
= 125°C
-
450
-
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 500A, - di
F
/dt = 2000A/μs
V
R
= 1200V, VGE = -10V, T
vj
= 25°C
E
rec
-
160
-
mWs
V
R
= 1200V, VGE = -10V, T
vj
= 125°C
-
300
-
mWs
2
FF5_1@3.xls
相关PDF资料 |
PDF描述 |
|---|---|
| FGA0150 | Gate Array |
| FGA0200 | Gate Array |
| FGA0600 | Gate Array |
| FGA1300 | Gate Array |
| FGA15000 | Gate Array |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FF50R06KF | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 50A I(C) | M:HL080HD5.3 |
| FF50R06KF2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 50A I(C) | M:HL080HD5.3 |
| FF50R06KF3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 50A I(C) | M:HL080HD5.3 |
| FF50R06KL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 50A I(C) | M:HL080HD5.3 |
| FF50R06KL2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C) |
发布紧急采购，3分钟左右您将得到回复。