- 您现在的位置：买卖IC网 > PDF目录375792 > FFB2222A (FAIRCHILD SEMICONDUCTOR CORP) NPN Multi-Chip General Purpose Amplifier PDF资料下载
参数资料
| 型号： | FFB2222A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN Multi-Chip General Purpose Amplifier |
| 中文描述： | 500 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 6 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 61K |
| 代理商： | FFB2222A |
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 100
μ
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
300
MHz
C
obo
C
ibo
NF
Output Capacitance
Input Capacitance
Noise Figure
4.0
20
2.0
pF
pF
dB
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
I
C
= 10 mA, I
B
= 0
40
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 125
°
C
V
EB
= 3.0 V, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
75
6.0
V
V
nA
μ
A
μ
A
nA
nA
10
0.01
10
10
20
I
EBO
I
BL
Emitter Cutoff Current
Base Cutoff Current
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 10 mA,V
CE
= 10 V,T
A
= -55
°
C
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 1.0 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
75
35
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
0.3
1.0
1.2
2.0
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
0.6
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
8
20
180
40
ns
ns
ns
ns
NPN Multi-Chip General Purpose Amplifier
(continued)
相关PDF资料 |
PDF描述 |
|---|---|
| FFB2227A | NPN & PNP General Purpose Amplifier |
| FFB2907A | PNP Multi-Chip General Purpose Amplifier |
| FFB3904 | NPN General Purpose Amplifier |
| FFB3906 | PNP Multi-Chip General Purpose Amplifier |
| FFB3946 | NPN & PNP General Purpose Amplifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FFB2222A_1 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Multi-Chip General Purpose Amplifier |
| FFB2227A | 功能描述:两极晶体管 - BJT NPN & PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FFB2227A_Q | 功能描述:两极晶体管 - BJT NPN & PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FFB24A0117K-- | 制造商:AVX 制造商全称:AVX Corporation 功能描述:Medium Power Film Capacitors |
| FFB24A0117KJC | 制造商:AVX 制造商全称:AVX Corporation 功能描述:Medium Power Film Capacitors |
发布紧急采购，3分钟左右您将得到回复。