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参数资料
| 型号： | FFB5551 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual-Chip NPN General Purpose Amplifier |
| 中文描述： | 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 112K |
| 代理商： | FFB5551 |
2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
F
Absolute Maximum Ratings*
T
C
=25
°
C
unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Value
160
180
6.0
200
- 55 ~ 150
Units
V
V
V
mA
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
- Continuous
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Parameter
Test Condition
Min.
Max.
Units
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
C
= 1.0mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100
°
C
V
EB
= 4.0V, I
C
= 0
160
180
6.0
V
V
V
nA
μ
A
nA
50
50
50
I
EBO
On Characteristics *
h
FE
Emitter Cut-off Current
DC Current Gain
V
CE
= 5.0V, I
C
= 1.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 5.0V, I
C
= 50mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
80
80
30
250
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.15
0.20
1.0
1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
Small Signal Characteristics
f
T
Current gain Bandwidth Product
V
CE
= 10V, I
C
= 10mA
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
100
300
MHz
C
obo
Output Capacitance
6.0
pF
FFB5551
Dual-Chip NPN General Purpose Amplifier
This device is deisgned for general purpose high voltage amplifiers.
E1 is Pin 1.
E1
B1
SC70-6
Mark: .P1
C2
C1
B2
E2
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