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参数资料
| 型号： | FFPF60SA60DS |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Stealth Rectifier |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | TO-220F-3L, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 75K |
| 代理商： | FFPF60SA60DS |
Rev. A, October 2004
F
2004 Fairchild Semiconductor Corporation
Electrical Characteristics (per leg)
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 8A
I
F
= 8A
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
* Pulse Test: Pulse Width=300
μ
s, Duty Cycle
=
2%
Typical Characteristics
Min.
Typ.
Max.
Units
V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
2.0
1.6
2.4
2.0
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
-
-
100
1000
25
μ
A
t
rr
Maximum Reverse Recovery Time
(I
F
=1A, di/dt = 100A/
μ
s, V
R
= 30V)
Maximum Reverse Recovery Time
(I
F
=8A, di/dt = 100A/
μ
s, V
R
= 30V)
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
(I
F
=8A, di/dt = 200A/
μ
s, V
R
= 390V)
ns
t
rr
-
-
30
ns
t
rr
I
rr
Q
rr
-
-
-
39
2
39
-
-
-
ns
A
nC
Figure 1.
Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
0.1
1
10
0.5
1.0
1.5
2.0
2.5
T
C
= 150
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 100
o
C
Forward Voltage , V
F
[V]
F
F
0
50
100 150 200 250 300 350 400 450 500 550 600
0.001
0.1
1
10
100
T
C
= 150
o
C
T
C
= 125
o
C
T
C
= 100
o
C
T
C
= 25
o
C
R
R
μ
A
Reverse Voltage , V
R
[V]
0.1
1
10
100
50
100
150
200
Typical Capacitance
at 0V = 169.3 pF
C
Reverse Voltage , V
R
[V]
100
200
300
400
500
600
26
28
30
32
34
36
38
40
42
44
I
F
= 8A
Tc = 25
o
C
R
r
di/dt [A/
μ
s]
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