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参数资料
| 型号： | FG2000JV-90DA |
| 厂商： | Powerex Power Semiconductors |
| 英文描述： | Card Edge Connector; Number of Contacts:164; Pitch Spacing:1mm; Tail Length:2.30mm; Contact Termination:Solder; Connector Mounting:PC Board; Contact Material:Phosphor Bronze; Contact Plating:Tin; Leaded Process Compatible:Yes |
| 中文描述： | 大功率逆变器使用的新闻包装型 |
| 文件页数： | 4/4页 |
| 文件大小： | 41K |
| 代理商： | FG2000JV-90DA |
Feb.1999
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
700
600
500
400
300
200
2500
0
500
1000
1500
2000
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V
C
S
= 4.0
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
50
40
30
20
10
010
20
30
40
60
50
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
I
T
= 2000A
V
RG
= 17V
C
S
= 4.0
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
800
700
600
500
400
300
60
10
20
30
40
50
V
D
= 2250V
V
DM
= 3375V
I
T
= 2000A
V
RG
= 17V
C
S
= 4.0
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
30
25
20
15
10
5
2500
0
500
1000
1500
2000
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V
C
S
= 4.0
μ
F
L
S
= 0.3
μ
H
T
j
= 125°C
0
0.8
1.6
2.4
0.4
1.2
2.0
0
800
2400
2000
400
1200 1600
V
D
= 2250V
I
GM
= 30A
d
iG
/d
t
= 10A/
μ
s
C
S
= 4.0
μ
F
R
S
= 5
T
j
= 125°C
d
iT
/d
t
= 300A/
μ
s
200A/
μ
s
100A/
μ
s
0
2.0
4.0
6.0
1.0
3.0
5.0
0
800
2400
2000
400
1200 1600
6
μ
F
4
μ
F
C
S
= 2
μ
F
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V
L
S
= 0.3
μ
H
T
j
= 125°C
RATE OF RISE OF TURN OFF GATE CURRENT (A/
μ
s)
T
RATE OF RISE OF TURN OFF GATE CURRENT (A/
μ
s)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
S
TURN ON CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
T
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
S
TURN OFF CURRENT (A)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
T
g
T
s
(
μ
s
TURN OFF CURRENT (A)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
T
g
,
s
(
μ
s
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
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