参数资料
型号: FGB20N6S2D
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: IGBT 晶体管
英文描述: 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述: 28 A, 600 V, N-CHANNEL IGBT, TO-263AB
封装: TO-263AB, 3 PIN
文件页数: 3/9页
文件大小: 232K
代理商: FGB20N6S2D
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
5
0
10
25
75
100
125
150
30
20
15
25
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
20
30
15
40
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 500
μ
H
5
10
35
25
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
400
20
10
700
100
T
J
= 125
o
C, R
G
= 25
, L = 500
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 15V
T
C =
75
o
C
V
GE
= 10V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
10
6
90
150
13
14
12
8
60
120
180
210
10
15
4
2
t
SC
I
SC
V
CE
= 390V, R
G
= 25
, T
J
= 125
o
C
0.50
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
1.25
2.0
2.25
8
6
14
T
J
= 25
o
C
0.75
T
J
= 150
o
C
12
1.5
1.75
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
T
J
= 125
o
C
10
2.5
2.75
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.50
1.0
1.5
2.0
2.5
0.75
T
J
= 150
o
C
1.75
1.25
T
J
= 25
o
C
2.25
0
2
4
8
6
14
12
10
T
J
= 125
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
相关PDF资料
PDF描述
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH20N6S2 Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
相关代理商/技术参数
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