参数资料
型号: FGP20N6S2
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: IGBT 晶体管
英文描述: 600V, SMPS II Series N-Channel IGBT
中文描述: 28 A, 600 V, N-CHANNEL IGBT, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 6/8页
文件大小: 183K
代理商: FGP20N6S2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
R
G
= 25
L = 500
μ
H
V
DD
= 390V
+
-
FGH20N6S2D
DIODE TA49469
FGH20N6S2
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
相关PDF资料
PDF描述
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
FGH30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP30N6S2D Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH30N6S2 600V, SMPS II Series N-Channel IGBT
相关代理商/技术参数
参数描述
FGP20N6S2D 功能描述:IGBT 晶体管 Comp N-CH 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FGP-2601-0501-2-0FF 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows)
FGP-3/4-BLK 制造商:ICO RALLY 功能描述: 制造商:ICO Rally 功能描述:
FGP30B 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier
FGP30B_11 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier