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参数资料
| 型号： | FLE Series |
| 英文描述： | Flash Memory Card 8 MB Through 64 MB (AMD Based)(8M字节-64M字节闪速存储器卡（基于AMD）) |
| 中文描述： | 闪存卡8兆，通过64兆（基于AMD）（800万字节，6400字节闪速存储器卡（基于AMD）的） |
| 文件页数： | 5/12页 |
| 文件大小： | 118K |
| 代理商： | FLE SERIES |
August 2000 Rev. 4 - ECO #13129
5
PCMCIA Flash Memory Card
FLE Series
PC Card Products
Absolute Maximum Ratings
(2)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to V
SS
V
CC
supply Voltage relative to V
SS
0°C to +60°C
-40°C to +85°C **
-30°C to +80°C
-40°C to +85°C **
-0.5V to V
CC
+0.5V (1)
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot
to -2.0V or overshoot to V
CC
+2.0V for periods
less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Sym
Parameter
Density
(Mbytes)
All
Notes
Typ
(4)
Max
Units
Test Conditions
I
CCR
V
CC
Read Current
40
(5)
75
mA
V
CC
= V
CC
max
tcycle = 150ns,CMOS levels
I
CCW
I
CCE
I
CCS
(CMOS)
V
CC
Program Current
V
CC
Erase Current
V
CC
Standby Current
All
All
8MB
30
(6)
30
(6)
50
40
(6)
40
(6)
200
mA
mA
μA
64MB
2,3
100
400
V
CC
= V
CC
max
Control Signals = V
CC
Reset = V
SS
, CMOS levels
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE
#, CE
#, OE#, WE#, REG#.
3. ICCS is specified for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.
4. Typical: V
= 5V, T = +25°C.
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.
CMOS Test Conditions: V
CC
= 5V ± 5%, V
IL
= V
SS
± 0.2V, V
IH
= V
CC
± 0.2V
DC Characteristics
(1)
Symbol
I
LI
Parameter
Notes
1
Min
Max
±20
Units
μA
Test Conditions
V
CC
= V
CC
MAX
Vin =V
CC
or V
SS
Input Leakage Current
I
LO
Output Leakage Current
1
±20
μA
V
CC
= V
CC
MAX
Vout =V
CC
or V
SS
V
IL
V
IH
V
OL
V
OH
V
LKO
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
Erase/Program
Lock Voltage
1
1
1
1
1
0
0.8
V
V
V
V
V
0.7V
CC
V
CC
+0.5
0.4
V
CC
IOL = 3.2mA
IOH = -2.0mA
V
CC
-0.4
2.0
** Advanced information
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150μA when VIN=V
CC
due to internal pull-down resistor.
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