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参数资料
| 型号： | FLM3135-12F |
| 厂商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段内部匹配场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 292K |
| 代理商： | FLM3135-12F |
1
Edition 1.1
August 2004
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25°C
V
W
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
5800
8700
-
2900
-
-1.0
-2.0
-3.5
-5.0
-
10.5
11.5
-
-40
-
40.5
41.5
-
VDS = 5V, IDS = 300mA
VDS = 5V, IDS = 3400mA
VDS = 5V, VGS = 0V
IGS = -300A
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.1 ~ 3.5 GHz,
ZS=ZL= 50 ohm
f = 3.5 GHz,
f = 10 MHz
2-Tone Test
Pout = 30.5dBm S.C.L.
mA
mS
V
dB
%
-42
-45
-
dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
3250
3800
mA
Idsr
IM3
ηadd
Gain Flatness
--
±0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
Channel to Case
Thermal Resistance
-
2.3
2.6
°C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IK
10V x Idsr x Rth
Channel Temperature Rise
--
80
°C
Tch
DESCRIPTION
The FLM3135-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB = 41.5dBm (Typ.)
High Gain: G1dB = 11.5dB (Typ.)
High PAE:
ηadd = 40% (Typ.)
Low IM3 = -45dBc@Po = 30.5dBm
Broad Band: 3.1 ~ 3.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
FLM3135-12F
C-Band Internally Matched FET
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相关代理商/技术参数 |
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|---|---|
| FLM3135-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, S-Band, 10.5dB, 3.1 3.5GHz, 4800mA, Bulk |
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