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参数资料
| 型号： | FM31T372-G |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14 |
| 封装： | GREEN, MS-012, SOIC-14 |
| 文件页数： | 14/26页 |
| 文件大小： | 790K |
| 代理商： | FM31T372-G |
FM31T372/374/376/378-G
Rev. 1.1
Apr. 2011
Page 21 of 26
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
Ratings
VDD
Power Supply Voltage with respect to VSS
-1.0V to +7.0V
VIN
Voltage on any signal pin with respect to VSS
-1.0V to +7.0V and
VIN ≤ VDD+1.0V *
VBAK
Backup Supply Voltage
-1.0V to +4.5V
TSTG
Storage Temperature
-55C to + 125C
TLEAD
Lead Temperature (Soldering, 10 seconds)
260 C
VESD
Electrostatic Discharge Voltage
- Human Body Model
(AEC-Q100-002 Rev. E)
- Charged Device Model
(AEC-Q100-011 Rev. B)
- Machine Model
(AEC-Q100-003 Rev. E)
2kV
1.25kV
100V
Package Moisture Sensitivity Level
MSL-1
* The “VIN < VDD+1.0V” restriction does not apply to the SCL and SDA inputs which do not employ a diode to VDD.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only,
and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = -40 C to + 85 C, VDD = 2.7V to 5.5V unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Main Power Supply
2.7
5.5
V
7
IDD
VDD Supply Current
@ SCL = 100 kHz
@ SCL = 400 kHz
@ SCL = 1 MHz
500
900
1500
A
1
ISB
Standby Current
For VDD < 5.5V
For VDD < 3.6V
150
120
A
2
VBAK
RTC Backup Supply Voltage
@ TA = +25C to +85C
@ TA = -40C to +25C
1.55
1.9
3.75
V
9
IBAK
RTC Backup Supply Current
@ TA = +25C, VBAK = 3.0V
@ TA = +85C, VBAK = 3.0V
@ TA = +25C, VBAK = 2.0V
@ TA = +85C, VBAK = 2.0V
1.4
2.1
1.15
1.75
A
4
IBAKTC
Trickle Charge Current with VBAK=0V
Fast Charge Off (FC = 0)
Fast Charge On (FC = 1)
50
200
120
2500
A
10
VTP0
VDD Trip Point Voltage, VTP(1:0) = 00b
2.55
2.6
2.70
V
5
VTP1
VDD Trip Point Voltage, VTP(1:0) = 01b
2.80
2.9
3.00
V
5
VTP2
VDD Trip Point Voltage, VTP(1:0) = 10b
3.80
3.9
4.00
V
5
VTP3
VDD Trip Point Voltage, VTP(1:0) = 11b
4.25
4.4
4.50
V
5
VRST
VDD for valid /RST @ IOL = 80 A at VOL
VBAK > VBAK min
VBAK < VBAK min
0
1.6
V
6
ILI
Input Leakage Current
1
A
3
ILO
Output Leakage Current
1
A
3
VIL
Input Low Voltage
All inputs except those listed below
CNT1-2 battery backed (VDD < 2.4V)
CNT1-2 (VDD > 2.4V)
-0.3
0.3 VDD
0.5
0.8
V
8
continued
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FM31T372-GTR | 功能描述:F-RAM F-RAM 4K w/RTC RoHS:否 存储容量:512 Kbit 组织:64 K x 8 接口:SPI 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube 制造商:Cypress Semiconductor |
| FM31T374 | 制造商:RAMTRON 制造商全称:RAMTRON 功能描述:System Supervisor & Temperature Compensated RTC(TCXO) with Embedded Crystal |
| FM31T374-G | 功能描述:F-RAM F-RAM 16K w/RTC RoHS:否 存储容量:512 Kbit 组织:64 K x 8 接口:SPI 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube 制造商:Cypress Semiconductor |
| FM31T374-GTR | 功能描述:F-RAM F-RAM 16K w/RTC RoHS:否 存储容量:512 Kbit 组织:64 K x 8 接口:SPI 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube 制造商:Cypress Semiconductor |
| FM31T376 | 制造商:RAMTRON 制造商全称:RAMTRON 功能描述:System Supervisor & Temperature Compensated RTC(TCXO) with Embedded Crystal |
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