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参数资料
| 型号： | FNA41060 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, DMA26 |
| 封装： | SPM-26 |
| 文件页数： | 11/15页 |
| 文件大小： | 924K |
| 代理商： | FNA41060 |
5
www.fairchildsemi.com
FNA41060 Rev. C
F
N
A
4
10
6
0
S
m
a
rt
P
o
w
e
r
M
o
d
u
le
Absolute Maximum Ratings (T
J = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150
°C.
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Symbol
Parameter
Conditions
Rating
Units
VPN
Supply Voltage
Applied between P- NU, NV, NW
450
V
VPN(Surge)
Supply Voltage (Surge)
Applied between P- NU, NV, NW
500
V
VCES
Collector-emitter Voltage
600
V
± IC
Each IGBT Collector Current
TC = 25°C, TJ ＜ 150°C
10
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse
Width
20
A
PC
Collector Dissipation
TC = 25°C per One Chip
34
W
TJ
Operating Junction Temperature
(Note 1)
-40 ~ 150
°C
Symbol
Parameter
Conditions
Rating
Units
VCC
Control Supply Voltage
Applied between VCC(H), VCC(L) - COM
20
V
VBS
High-side Control Bias
Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3~VCC+0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3~VCC+0.3
V
IFO
Fault Output Current
Sink Current at VFO Pin
1
mA
VSC
Current Sensing Input Voltage
Applied between CSC - COM
-0.3~VCC+0.3
V
Symbol
Parameter
Conditions
Rating
Units
VRRM
Maximum Repetitive Reverse Voltage
600
V
IF
Forward Current
TC = 25°C
0.5
A
IFP
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
1
A
TJ
Operating Junction Temperature
-40 ~ 150
°C
Symbol
Parameter
Conditions
Rating
Units
VPN(PROT)
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2ms
400
V
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
2000
Vrms
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Rth(j-c)Q
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module)
-
3.6
°C/W
Rth(j-c)F
Inverter FWD part (per 1/6 module)
-
4.8
°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FNA41060_1010 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module |
| FNA41060B2 | 功能描述:IGBT 模块 Smart Power Module Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FNA-4-1-2 | 制造商:Cooper Bussmann 功能描述:FUSE 4.5A 125V TIME DLY ACTING 2PIN - Bulk |
| FNA41560 | 功能描述:IGBT 晶体管 Smart Power Module Motion-SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FNA41560_1010 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module |
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