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参数资料
| 型号： | FNA41060B2 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | MODULE SPM PFC 600V 10A SPM-26 |
| 标准包装： | 12 |
| 系列： | Motion-SPM™ |
| 类型： | IGBT |
| 配置： | 3 相桥 |
| 电流： | 10A |
| 电压： | 600V |
| 电压 - 隔离： | 2000Vrms |
| 封装/外壳： | * |
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Pin Name
V TH
R TH
P
U
V
W
N U
N V
N W
C SC
V FO
IN (WL)
IN (VL)
IN (UL)
COM
V CC(L)
V CC(H)
IN (WH)
IN (VH)
IN (UH)
V S(W)
V B(W)
V S(V)
V B(V)
V S(U)
V B(U)
Pin Description
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Positive DC-Link Input
Output for U-Phase
Output for V-Phase
Output for W-Phase
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
Fault Output
Signal Input for Low-Side W-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side U-Phase
Common Supply Ground
Low-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Common Bias Voltage for IC and IGBTs Driving
Signal Input for High-Side W-Phase
Signal Input for High-Side V-Phase
Signal Input for High-Side U-Phase
High-Side Bias Voltage Ground for W-Phase IGBT Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
?2011 Fairchild Semiconductor Corporation
FNA41060 / FNA41060B2 Rev. C3
3
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FNA41060 | MOD SPM 600V 10A SPM26-AA |
| FNA41560B2 | MODULE SPM 600V 15A 3PH SPM26AAC |
| FNA41560 | MOD SPM 600V 15A SPM26-AA |
| FNB40560 | MOD SPM 600V 5A SPM26-AA |
| FNB41060 | MOD SPM 600V 10A SPM26-AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FNA-4-1-2 | 制造商:Cooper Bussmann 功能描述:FUSE 4.5A 125V TIME DLY ACTING 2PIN - Bulk |
| FNA41560 | 功能描述:IGBT 晶体管 Smart Power Module Motion-SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FNA41560_1010 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module |
| FNA41560B2 | 功能描述:IGBT 模块 Smart Power Module Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FNA-5 | 功能描述:保险丝 125VAC 5A Dual Element Time Delay RoHS:否 制造商:Littelfuse 产品:Surface Mount Fuses 电流额定值:0.5 A 电压额定值:600 V 保险丝类型:Fast Acting 保险丝大小/组:Nano 尺寸:12.1 mm L x 4.5 mm W 安装风格: 端接类型:SMD/SMT 系列:485 |
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