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参数资料
| 型号： | FNB41060 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/15页 |
| 文件大小： | 0K |
| 描述： | MOD SPM 600V 10A SPM26-AA |
| 标准包装： | 12 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 10A |
| 电压： | 600V |
| 电压 - 隔离： | 2000Vrms |
| 封装/外壳： | SPM26-AA |
Absolute Maximum Ratings (T J = 25°C,
Inverter Part
unless otherwise specified.)
Symbol
V PN
V PN(Surge)
V CES
I O,25
I O,100
I pk
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Output Phase Current
Output Phase Current
Output Peak Phase Current
Conditions
Applied between P - N U , N V , N W
Applied between P - N U , N V , N W
T C = 25°C, T J ＜ 150°C (2nd Note 1)
T C = 100°C , T J ＜ 150°C (2nd Note 1)
T C = 25°C, T J ＜ 150°C, Under 1 ms Pulse
Rating
450
500
600
10
5
15
Unit
V
V
V
A
A
A
Width
P C
T J
Collector Dissipation
Operating Junction Temperature
T C = 25°C per Chip
(2nd Note 2)
32
- 40 ~ 150
W
°C
2nd Notes:
1. Sinusoidal PWM at V PN = 300 V, V CC = V BS = 15 V, T J ＜ 150 ℃ , F SW = 20 kHz, MI = 0.9, PF = 0.8
2. The maximum junction temperature rating of the power chips integrated within the Motion SPM ? 45 product is 150 ? C.
Control Part
Symbol
V CC
V BS
Parameter
Control Supply Voltage
High - Side Control Bias Voltage
Conditions
Applied between V CC(H) , V CC(L) - COM
Applied between V B(U) - V S(U) , V B(V) - V S(V) ,
Rating
20
20
Unit
V
V
V B(W) - V S(W)
V IN
Input Signal Voltage
Applied between IN (UH) , IN (VH) , IN (WH) , -0.3 ~ V CC + 0.3
V
IN (UL) , IN (VL) , IN (WL) - COM
V FO
I FO
V SC
Fault Output Supply Voltage
Fault Output Current
Current-Sensing Input Voltage
Applied between V FO - COM
Sink Current at V FO pin
Applied between C SC - COM
-0.3 ~ V CC + 0.3
1
-0.3 ~ V CC + 0.3
V
mA
V
Bootstrap Diode Part
Symbol
V RRM
I F
I FP
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Conditions
T C = 25°C, T J ＜ 150°C
T C = 25°C, T J ＜ 150°C, Under 1 ms Pulse
Rating
600
0.50
1.50
Unit
V
A
A
Width
T J
Operating Junction Temperature
-40 ~ 150
°C
Total System
Symbol
V PN(PROT)
T STG
V ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Storage Temperature
Isolation Voltage
Conditions
V CC = V BS = 13.5 ~ 16.5 V
T J = 150°C, Non-Repetitive, < 2 ? s
60 Hz, Sinusoidal, AC 1 Minute, Connect
Rating
400
-40 ~ 125
2000
Unit
V
°C
V rms
Pins to Heat Sink Plate
Thermal Resistance
Symbol
R th(j-c)Q
R th(j-c)F
Parameter
Junction to Case Thermal Resistance
Conditions
Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
Min.
-
-
Typ.
-
-
Max.
3.8
4.8
Unit
°C / W
°C / W
2nd Notes:
3. For the measurement point of case temperature (T C ), please refer to Figure 2.
?2011 Fairchild Semiconductor Corporation
FNB41060 Rev. C3
5
www.fairchildsemi.com
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