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参数资料
| 型号： | FOD3181T |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER HS 20V 1.5A 8-DIP |
| 标准包装： | 1,000 |
| 电压 - 隔离： | 5000Vrms |
| 通道数： | 1，单向 |
| 电流 - 输出 / 通道： | 500mA |
| 传输延迟高 - 低 @ 如果： | 105ns @ 10mA |
| 电流 - DC 正向(If)： | 12mA ~ 18mA |
| 输入类型： | DC |
| 输出类型： | 推挽式/图腾柱 |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.400"，10.16mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
Reflow Profile
300
250
200
150
100
50
0
245 C, 10–30 s
260 C peak
Time above 183C, <160 sec
Ramp up = 2–10C/sec
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
? Peak reflow temperature: 260 C (package surface temperature)
? Time of temperature higher than 183 C for 160 seconds or less
? One time soldering reflow is recommended
Output Power Derating
The maximum package power dissipation is 295mW. The
package is limited to this level to ensure that under normal
operating conditions and over extended temperature
range that the semiconductor junction temperatures do
not exceed 125°C. The package power is composed of
three elements; the LED, static operating power of the
output IC, and the power dissipated in the output power
MOSFET transistors. The power rating of the output IC is
250mW. This power is divided between the static power of
the integrated circuit, which is the product of I DD times the
power supply voltage (V DD – V EE ). The maximum IC
static output power is 150mW, (V DD – V EE ) = 25V, I DD =
6mA. This maximum condition is valid over the opera-
tional temperature range of -40°C to +100°C. Under these
maximum operating conditions, the output of the power
MOSFET is allowed to dissipate 100mW of power.
The absolute maximum output power dissipation versus
ambient temperature is shown in Figure 12. The output
driver is capable of supplying 100mW of output power
over the temperature range from -40°C to 87°C. The out-
put derates to 90mW at the absolute maximum operating
temperature of 100°C.
Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature
The output power is the product of the average output
current squared times the output transistor’s R DS(ON) :
P O(AVG) = I O(AVG) 2 ? R DS(ON)
The I O(AVG) is the product of the duty factor times the
peak current flowing in the output. The duty factor is
the ratio of the ‘on’ time of the output load current divided
by the period of the operating frequency. An R DS(ON) of
2.0 ? results in an average output load current of 200mA.
The load duty factor is a ratio of the average output time
of the power MOSFET load circuit and period of the driv-
ing frequency.
The maximum permissible, operating frequency is deter-
mined by the load supplied to the output at its resulting
output pulse width. Figure 13 shows an example of a
0.03μF gate to source capacitance with a series resis-
tance of 40 ? . This reactive load results in a composite
average pulse width of 1.5μs. Under this load condition it
is not necessary to derate the absolute maximum output
current out to 250kHz.
Fig. 13 Output Current Derating vs. Frequency
1.5
T A = -40°C to 100°C
Load = 0.03μF + 40?
V DD = 20V
0.15
V DD – V EE = Max. = 25V
I DD = 6mA
LED Power = 45mW
1
I F = 12mA
LED Duty Factor = 50%
Output Pulse Width = 1.5μs
0.1
0.5
0.05
0
1
10
250
F – FREQUENCY (kHz)
0
-40
-20
0
20
40
60
80 85
T A – AMBIENT TEMPERATURE (°C)
?2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
10
www.fairchildsemi.com
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