参数资料
型号: FOD4118SD
厂商: Fairchild Semiconductor
文件页数: 2/12页
文件大小: 0K
描述: TRIAC DRV ZC 300MA 800V 6-SMD
标准包装: 1,000
电压 - 隔离: 5000Vrms
通道数: 1
电压 - 断路: 800V
输出类型: 交流过零三端双向可控硅开关
电流 - 栅极触发电流 (Igt)(最大): 1.3mA
电流 - 保持 (Ih): 200µA
电流 - DC 正向(If): 30mA
电流 - 输出 / 通道: 300mA
安装类型: 表面贴装
封装/外壳: 6-SMD
供应商设备封装: 6-SMD
包装: 散装
Absolute Maximum Ratings (T A = 25°C unless otherwise noted)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Device
Value
Units
TOTAL DEVICE
T STG
T OPR
T SOL
T J
V ISO
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave)
Junction Temperature Range
Isolation Test Voltage (1)
All
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
125
5000
°C
°C
°C
°C
Vac(rms)
(rms AC voltage, 60Hz, 1 min. duration)
P DTOTAL
Total Device Power Dissipation @ 25°C
Derate above 25°C
All
500
6.6
mW
mW/°C
EMITTER
I F
V R
P DE
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate above 25°C
All
All
All
30
6
50
0.71
mA
V
mW
mW/°C
DETECTOR
V DRM
Off-State Output Terminal Voltage
FOD410, FOD4116
600
V
FOD4108, FOD4118
800
I TSM
Peak Non-Repetitive Surge Current
All
3
A
(single cycle 60Hz sine wave)
I TM
P DDET
Peak On-State Current
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
All
All
300
450
5.9
mA
mW
mW/°C
Note:
1. Isolation voltage, V ISO , is an internal device dielectric breakdown rating. For this test, Pins 1, 2 and 3 are common,
and Pins 4, 5 and 6 are common. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VRMS for 1 second
duration.
?2004 Fairchild Semiconductor Corporation
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.5.0
2
www.fairchildsemi.com
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