参数资料
型号: FODM3063R2
厂商: Fairchild Optoelectronics Group
文件页数: 3/13页
文件大小: 0K
描述: IC TRIAC ZERO X 600V 5MA 4-MFP
产品目录绘图: FOD Series 4-SMD Package
标准包装: 1
电压 - 隔离: 3750Vrms
通道数: 1
电压 - 断路: 600V
输出类型: 交流过零三端双向可控硅开关
电流 - 栅极触发电流 (Igt)(最大): 5mA
电流 - 保持 (Ih): 300µA
电流 - DC 正向(If): 60mA
电流 - 输出 / 通道: 70mA
安装类型: 表面贴装
封装/外壳: 4-SMD,鸥翼型
供应商设备封装: 4-MFP
包装: 标准包装
产品目录页面: 2760 (CN2011-ZH PDF)
其它名称: FODM3063R2DKR
Electrical Characteristics (T A = 25°C)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Units
EMITTER
V F
I R
Input Forward Voltage
Reverse Leakage Current
I F = 30mA
V R = 6V
1.5
100
V
μA
DETECTOR
I DRM1
dV/dt
Peak Blocking Current,
Either Direction
Critical Rate of Rise of
Off-State Voltage
Rated V DRM , I F = 0 (1)
I F = 0 (Figure 1) (2)
600
500
nA
V/μs
Transfer Characteristics
Symbol DC Characteristics
I FT
LED Trigger Current
Test Conditions
Main Terminal
Device
FODM3062
Min.
Typ.*
Max.
10
Units
mA
Voltage = 3V (3)
FODM3082
FODM3063
FODM3083
5
I H
Holding Current,
All
300
μA
Either Direction
V TM
Peak On-State Voltage, I F = Rated I FT ,
All
3
V
Either Direction
Zero Crossing Characteristics
I TM = 100mA peak
Symbol
V IH
Characteristics
Inhibit Voltage,
Test Conditions
I F = Rated I FT
Device
All
Min.
Typ.*
Max.
20
Units
V
MT1-MT2 Voltage
above which device
will not trigger
IDRM2
Leakage in Inhibit
I F = Rated I FT ,
All
2
mA
State
Rated VDRM,
Off-State
Isolation Characteristics
Characteristics
Steady State Isolation
Test Conditions
(1 Minute)
Symbol
V ISO
Device
All
Min.
3750
Typ.*
Max.
Units
VRMS
Voltage (4)
R.H. = 40% to 60%
*All typicals at 25°C.
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 1 for test circuit. Commutating dv/dt is function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an I F value less than or equal to max I FT . Therefore, recommended operating
I F lies between max I FT (10mA for FODM3062/82, 5mA for FODM3063/83) and absolute max I F (60 mA).
4. Steady state isolation voltage, V ISO , is an internal device dielectric breakdown rating. For this test, pins 1 & 2 are
common, and pins 3 & 4 are common.
?2006 Fairchild Semiconductor Corporation
FODM3062, FODM3063, FODM3082, FODM3083 Rev. 1.0.9
3
www.fairchildsemi.com
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