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参数资料
| 型号： | FODM8801AR2 |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | OPTO PHOTOTRANSISTOR 4-MINIFLAT |
| 标准包装： | 2,500 |
| 系列： | OptoHit™ |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 3750Vrms |
| 电流传输比（最小值）： | 35% @ 1mA |
| 电流传输比（最大）： | 230% @ 1mA |
| 输出电压： | 75V |
| 电流 - 输出 / 通道： | 30mA |
| 电流 - DC 正向(If)： | 20mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-SOIC（0.170"，4.40mm） |
| 包装： | 带卷 (TR) |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T A = 25°C unless otherwise speci?ed
Symbol
Parameter
Value
Units
TOTAL PACKAGE
T STG
T OPR
T J
T SOL
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
-40 to +150
-40 to +125
-40 to +140
260 for 10 s
°C
°C
°C
°C
(Refer to Re?ow Temperature Pro?le on page 13)
EMITTER
I F(average)
V R
PD LED
Continuous Forward Current
Reverse Input Voltage
Power Dissipation (1)(3)
20
6
40
mA
V
mW
DETECTOR
I C(average)
V CEO
V ECO
PD C
Continuous Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Power Dissipation (2)(3)
30
75
7
150
mA
V
V
mW
Recommended Operating Conditions
The Recommended Operating Conditions table de?nes the conditions for actual device operation. Recommended
operating conditions are speci?ed to ensure optimal performance to the datasheet speci?cations. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
T A
V FL(OFF)
I FH
Parameter
Operating Temperature
Input Low Voltage
Input High Forward Current
Value
-40 to +125
-5.0 to +0.8
1 to 10
Units
°C
V
mA
Isolation Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V ISO
Input-Output Isolation Voltage f = 60 Hz, t = 1 min., I I-O ≤ 10 μA
(4)(5)
3,750
Vac RMS
R ISO
Isolation Resistance
V I-O = 500 V (4)
10 12
Ω
C ISO
Isolation Capacitance
f = 1 MHz
0.3
0.5
pF
Notes:
1. Derate linearly from 73?C at a rate of 0.24 mW/?C
2. Derate linearly from 73?C at a rate of 2.23 mW/?C.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions
outside these ratings.
4. Device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
5. 3,750 VAC RMS for 1 minute is equivalent to 4,500 VAC RMS for 1 second.
?2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
3
www.fairchildsemi.com
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