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参数资料
| 型号： | FP2189-PCB900S |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
| 中文描述： | 高性能1瓦异质结场效应晶体管（异质结场效应管）在低成本的SOT - 89表面贴装 |
| 文件页数： | 1/6页 |
| 文件大小： | 451K |
| 代理商： | FP2189-PCB900S |
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
May 2002
The Communications Edge TM
Preliminary Product Information
FP2189
1 Watt HFET
Product Features
50 – 4000 MHz
Up to +31 dBm P1dB
Up to +45 dBm Output IP3
High Drain Efficiency
19 dB Gain @ 900 MHz
MTBF >100 Years
SOT-89 SMT Package
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +4
5 dBm output
IP3 performance and an output power of +31 dBm at
1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTBF of
greater than 100 years at a mounting temperature of
85
°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
1
3
2
4
Function
Pin No.
Input
1
Ground
2
Output/Bias
3
Ground
4
Specifications
DC Electrical Parameter
Units
Min
Typ
Max
Saturated Drain Current1, Idss
mA
500
Transconductance, Gm
mS
350
Pinch Off Voltage2, Vp
V
-2.0
Parameters3
Units
Min
Typ
Max
Frequency Range
MHz
50
4000
Small Signal Gain, Gss
dB
15
Output P1dB
dBm
+31
Output IP34
dBm
+45
Thermal Resistance
°C/W
30
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 0.4 mA.
3. Test conditions unless otherwise noted: T = 25C, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz
in an application circuit with ZL = ZLOPT, ZS = ZSOPT .
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-40 to +125
°C
Maximum DC Power
4.0 W
RF Input Power (continuous)
+20 dBm
Operation of this device above any of there parameters may cause permanent damage
Typical Parameters5
Parameter
Units
Typical
Frequency
MHz
915
1960
2140
S21
dB
19.1
15.2
13.8
S11
dB
-17
-16
-23
S22
dB
-10
-8
-9
Output P1dB
dBm
+30.3
+30.8
+31.4
Output IP3
dBm
+44.3
+44.2
+45.5
Noise Figure
dB
4.2
3.5
4.5
Vdd
V
+8
Idq
6
mA
250
Idd at P1dB
mA
260
330
320
5.
Typical parameters represent performance in an application circuit.
6.
Idq is the quiescent drain current at small signal output levels. The
current may increase as the output power is increased near its
compression point.
Ordering Information
Part No.
Description
FP2189
1-Watt HFET
(Available in Tape & Reel)
FP2189-PCB900S
900 MHz Application Circuit
FP2189-PCB1900S
1900 MHz Application Circuit
FP2189-PCB2140S
2140 MHz Application Circuit
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