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参数资料
| 型号： | FPDB30PH60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | IC SMART POWER MOD 30A SPM27-GA |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Wire Bonding Change 06/April/2007 |
| 标准包装： | 10 |
| 类型： | IGBT |
| 配置： | 2 相 |
| 电流： | 20A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27GA |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Absolute Maximum Ratings (T J = 25°C,
Converter Part
unless otherwise specified.)
Symbol
V i
V i(Surge)
V PN
V PN(Surge)
V CES
I i
Item
Supply Voltage
Supply Voltage (Surge)
Output Voltage
Output Voltage (Surge)
Collector - Emitter Voltage
Input Current (100% Load)
Condition
Applied between R - S
Applied between R - S
Applied between P - N
Applied between P - N
T C < 95°C, V i = 220 V, V PN = 390 V,
Rating
264
500
450
500
600
20
Unit
V rms
V
V
V
V
A
V PWM = 20 kHz
I i(125%)
Input Current (125% Load)
T C < 95°C, V i = 220V , V PN = 390 V,
25
A
V PWM = 20 kHz, 1 min Non-Repetitive
P C
P RSH
T J
Collector Dissipation
Power Rating of Shunt Resistor
Operating Junction Temperature
T C = 25°C per IGBT
T C < 125°C
(Note 2)
83
2
-20 ~ 125
W
W
°C
Notes:
2. The maximum junction temperature rating of the power chips integrated within the PFC SPM ? product is 150 ? C(@T C ? 100 ? C). However, to insure safe operation of the PFC
SPM product, the average junction temperature should be limited to T J(ave) ? 125 ? C (@T C ? 100 ? C)
Control Part
Symbol
V CC
V IN
V FO
I FO
V SC
Item
Control Supply Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Condition
Applied between V CC - COM
Applied between IN - COM
Applied between V FO - COM
Sink Current at V FO Pin
Applied between C SC - COM
Rating
20
-0.3 ~ 17.0
-0.3 ~ V CC +0.3
5
-0.3~V CC +0.3
Unit
V
V
V
mA
V
Total System
Symbol
T C
T STG
V ISO
Item
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Condition
60 Hz, Sinusoidal, AC 1 Minute, Connect
Rating
-20 ~ 100
-40 ~ 125
2500
Unit
°C
°C
V rms
Pins to Heat-Sink Plate
Thermal Resistance
Symbol
R ? (j-c)Q
R ? (j-c)HD
R ? (j-c)LD
Item
Junction to Case Thermal Resistance
(Referenced to PKG Center)
Condition
IGBT
High-Side Diode
Low-Side Diode
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
2.0
1.4
Unit
°C/W
°C/W
°C/W
Notes :
3. For the measurement point of case temperature(T C ), please refer to Figure 2.
?2005 Fairchild Semiconductor Corporation
FPDB30PH60 Rev. C3
4
www.fairchildsemi.com
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