参数资料
型号: FPF2108
厂商: Fairchild Semiconductor
文件页数: 10/12页
文件大小: 0K
描述: IC LOAD SWITCH ADVANCED SOT23-5
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 3,000
系列: IntelliMax™
类型: 高端开关
输出数: 1
Rds(开): 160 毫欧
内部开关:
电流限制: 400mA
输入电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SC-74A,SOT-753
供应商设备封装: SOT-23-5
包装: 带卷 (TR)
Application Information
Typical Application
Battery
1.8V-5.5V
OFF ON
V IN V OUT
FPF2108 - FPF2110
ON FLAGB
R1 = 100K ?
LOAD
R2 = 499 ?
C1 = 4.7μF
Input Capacitor
To limit the voltage drop on the input supply caused by transient
in-rush currents when the switch turns-on into a discharged load
capacitor or a short-circuit, a capacitor needs to be placed
between V IN and GND. A 4.7μF ceramic capacitor, C IN , must
be placed close to the V IN pin. A higher value of C IN can be
used to further reduce the voltage drop experienced as the
switch is turned on into a large capacitive load.
Output Capacitor
A 0.1μF capacitor C OUT , should be placed between V OUT and
GND. This capacitor will prevent parasitic board inductances
from forcing V OUT below GND when the switch turns-off.
Power Dissipation
During normal operation as a switch, the power dissipation is
small and has little effect on the operating temperature of the
part. The parts with the higher current limits will dissipate the
P = (I LIM ) 2 ? R DS = (0.8) 2 ? 0.125 = 80mW
most power and that will only typically be,
When in current limit the maximum power dissipation will occur
when the output is shorted to ground. A short on the output will
cause the part to operate in a constant current state until the
thermal shutdown activates. It will then cycle in and out of
thermal shutdown so long as the ON pin is active and the short
is present.
Board Layout
For best performance, all traces should be as short as possible.
To be most effective, the input and output capacitors should be
placed close to the device to minimize the effects that parasitic
trace inductances may have on normal and short-circuit
operation. Using wide traces for V IN , V OUT and GND will help
minimize parasitic electrical effects along with minimizing the
case to ambient thermal impedance.
GND
C2 = 0.1 μ F
FPF2108-FPF2110 Rev. E
10
www.fairchildsemi.com
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