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| 型号： | FQA90N15 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 90A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 45A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 285nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8700pF @ 25V |
| 功率 - 最大： | 375W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 其它名称： | FQA90N15-ND FQA90N15FS |
December 2013
FQA90N15
N-Channel QFET? MOSFET
150 V, 9 0 A, 18 mΩ
Features
? R DS(on) = 18 m Ω (Max.) @ V GS = 10 V , I D = 4 5 A
? Low G ate C harge ( T yp . 220 nC)
? Low Crss ( T yp . 200 pF)
? 100% A valanche T ested
? 175°C Maximum Junction Memperature Rating
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA90N15
150
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
90
63.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
360
± 25
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1400
90
37.5
6.0
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate A bove 25 ° C
375
2.5
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA90N15
0.4
0.24
40
Unit
° C/W
° C/W
° C/W
?2006 Fairchild Semiconductor Corporation
FQA90N15 Rev C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FQA90N15 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-3P |
| FQA90N15_F109 | 功能描述:MOSFET 150V 90A N-Chan Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA9N50 | 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA9N90 | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA9N90_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
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