- 您现在的位置：买卖IC网 > PDF目录21695 > FQB7N60TM (Fairchild Semiconductor)MOSFET N-CH 600V 7.4A D2PAK PDF资料下载
参数资料
| 型号： | FQB7N60TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7.4A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1430pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
October 2013
FQB7N60 / FQI7N60
N-Channel QFET ? MOSFET
800 V, 3.9 A, 3.6 ?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 3.9 A, 800 V, R DS(on) = 3.6 ? (Max . ) @V GS = 10 V,
I D = 1.95 A
? Low Gate Charge ( Typ. 19 nC)
? Low Crss ( Typ. 8.6 pF)
? 100% Avalanche Tested
D
D
G
DS
G
S
D 2 -PAK
G
I 2 -PAK
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
7.4
4.7
A
A
I DM
Drain Current
- Pulsed
(Note 1)
29.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
580
7.4
14.2
4.5
3.13
142
1.14
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient ( * 1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
0. 88
62.5
40
Unit
o C/W
?2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| KT11P4SA1M35LFG | SWITCH TACTILE SPST-NO 1VA 32V |
| MCM01-002DD400J-F | CAP MICA 40PF 500V 5% SMD |
| MCM01-002DD330J-F | CAP MICA 33PF 500V 5% SMD |
| MCM01-001DD300M-F | CAP MICA 30PF 500V 20% SMD |
| MCM01-001DD300K-F | CAP MICA 30PF 500V 10% SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQB7N60TM_WS | 功能描述:MOSFET 600V 7.4A 1Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB7N60TMWS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET?? MOSFET 800 V, 3.9 A, 3.6 ?? |
| FQB7N65C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET |
| FQB7N65CTM | 功能描述:MOSFET 650V 7A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB7N80 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。