参数资料
型号: FQD13N06TF
厂商: Fairchild Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH 60V 10A DPAK
标准包装: 2,000
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 140 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 7.5nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
?200 0 Fairchild Semiconductor Corporation
FQD13N06 Rev. C 1
7
www.fairchildsemi.com
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