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参数资料
| 型号： | FQD16N25CTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 16A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 270 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 53.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1080pF @ 25V |
| 功率 - 最大： | 160W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FQD16N25CTMDKR |
November 2013
FQD16N25C
N-Channel QFET ? MOSFET
250 V, 16 A, 270 m ?
Features
? 16 A, 250 V, R DS(on) = 270 m ? (Max.) @ V GS = 10 V,
I D = 8 A
? Low Gate Charge (Typ. 41 nC)
? Low Crss (Typ. 68 pF)
? 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD16N25CTM
250
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
16
10.1
A
A
I DM
Drain Current
- Pulsed
(Note 1)
64
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
432
16
160
5.5
160
1.28
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQD16N25CTM
0.78
110
Unit
°C / W
?2006 Fairchild Semiconductor Corporation
FQD16N25C Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FQD16N25CTM_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FQD16N25CTM_F080 | 功能描述:MOSFET Trans MOS N-Ch 250V 16A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD17N08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel MOSFET |
| FQD17N08L | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V LOGIC N-Channel MOSFET |
| FQD17N08LTF | 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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