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参数资料
| 型号： | FQD2N60CTF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 1.9A DPAK |
| 产品变化通告： | Passivation Material Change 14/May/2008 |
| 标准包装： | 2,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 欧姆 @ 950mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 235pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
November 2013
FQD2N60C / FQU2N60C
N-Channel QFET ? MOSFET
600 V, 1.9 A, 4.7 ?
Features
? 1.9 A, 600 V, R DS(on) = 4.7 ? (Max.) @ V GS = 10 V,
I D = 0.95 A
? Low Gate Charge (Typ. 8.5 nC)
? Low Crss (Typ. 4.3 pF)
? 100% Avalanche Tested
? RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
D-PAK
G
D
S
I-PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD2N60CTM / FQU2N60CTU
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
1.9
1.14
A
A
I DM
Drain Current
- Pulsed
(Note 1)
7.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C)*
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in 2 pad of 2 oz copper), Max.
FQD2N60CTM /
FQU2N60CTU
2.56
110
50
Unit
°C / W
?2003 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C1
1
www.fairchildsemi.com
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| FQD2N60CTF_F080 | 功能描述:MOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD2N60CTM | 功能描述:MOSFET N-CH/600V/2A/A.QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD2N60CTM_WS | 功能描述:MOSFET 600V 1.9A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD2N60TF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD2N60TM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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