参数资料
型号: FQD2N60CTM
厂商: Fairchild Semiconductor
文件页数: 7/9页
文件大小: 0K
描述: MOSFET N-CH 600V 1.9A DPAK
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Passivation Material Change 14/May/2008
标准包装: 1
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 1.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.7 欧姆 @ 950mA,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 10V
输入电容 (Ciss) @ Vds: 235pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252-3
包装: 标准包装
其它名称: FQD2N60CTMDKR
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
Dimension in Millimeters
?2003 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C1
7
www.fairchildsemi.com
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参数描述
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FQD2N60TM 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQD2N80 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FQD2N80TF 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube