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参数资料
| 型号： | FQI7N60TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7.4A I2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1430pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQB 7 N 6 0TM
FQB7N60TM_WS
FQI 7 N 6 0TU
Top Mark
FQB 7 N 6 0
FQB 7N60S
FQI 7 N 6 0
Package
D 2 -PAK
D 2 -PAK
I 2 -PAK
Packing Method
Tape and Reel
Tape and Reel
Tube
Reel Size
330 mm
330 mm
N/A
Tape Width
24 mm
24 mm
N/A
Quantity
800 units
800 units
50 units
= 25 C unless otherwise noted.
Electrical Characteristics T
C
o
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 3.7 A
V DS = 50 V, I D = 3.7 A
3.0
--
--
--
0.8
6.4
5.0
1.0
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
1100
135
16
1430
175
21
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 300 V, I D = 7.4 A,
R G = 25 ?
V DS = 480 V, I D = 7.4 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
30
80
65
60
29
7
14.5
70
170
140
130
38
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
7.4
29.6
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 7.4 A
V GS = 0 V, I S = 7.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
320
2.4
1.4
--
--
V
ns
μ C
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 19.5 mH, I AS = 7.4 A, V DD = 50 V, R G = 25 ? , s tarting T J = 25 o C .
3. I SD ≤ 7.4 A, di/dt ≤ 2 00 A/μs, V DD ≤ BV DSS , s tarting T J = 25 o C .
4. Essentially independent of operating temperature .
?2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
2
www.fairchildsemi.com
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