参数资料
型号: FQP19N20CTSTU
厂商: Fairchild Semiconductor
文件页数: 9/10页
文件大小: 0K
描述: MOSFET N-CH 200V 19A TO-220
产品培训模块: High Voltage Switches for Power Processing
标准包装: 50
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 19A
开态Rds(最大)@ Id, Vgs @ 25° C: 170 毫欧 @ 9.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 53nC @ 10V
输入电容 (Ciss) @ Vds: 1080pF @ 25V
功率 - 最大: 139W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
?2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
9
www.fairchildsemi.com
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FQP1N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQP1P50 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube