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| 型号： | FQP70N10 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 57A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 57A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 28.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3300pF @ 25V |
| 功率 - 最大： | 160W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
November 2013
FQP70N10
N-Channel QFET ? MOSFET
100 V, 57 A, 23 m Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
Features
? 57 A, 100 V, R DS(on) = 23 m ? (Max.) @ V GS = 10 V,
I D = 28.5 A
? Low Gate Charge (Typ. 85 nC)
? Low Crss (Typ. 150 pF)
? 100% Avalanche Tested
? 175°C Maximum Junction Temperature Rating
audio amplifier, DC motor control, and variable switching
power applications.
D
GD
S
Absolute Maximum Ratings
TO-220
T C = 25°C unless otherwise noted.
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP70N10
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
57
40.3
A
A
I DM
Drain Current
- Pulsed
(Note 1)
228
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1300
57
16
6.0
160
1.06
-55 to +175
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP70N10
0.94
62.5
Unit
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQP70N10 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FQP70N10 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FQP7N10 | 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP7N10 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FQP7N10L | 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP7N20 | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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