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参数资料
| 型号： | FQPF9N25C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 8.8A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 430 毫欧 @ 4.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 710pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
November 2013
FQPF9N25C / FQPF9N25CT
N-Channel QFET ? MOSFET
250 V, 8.8 A, 430 m Ω
Features
? 8.8 A, 250 V, R DS(on) = 430 m ? (Max.) @ V GS = 10 V,
I D = 4.4 A
? Low Gate Charge (Typ. 26.5 nC)
? Low Crss (Typ. 45.5 pF)
? 100% Avalanche Tested
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
D
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQPF9N25C / FQPF9N25CT
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
250
8.8 *
5.6 *
V
A
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
35.2 *
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
285
8.8
7.4
5.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
38
0.3
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQPF9N25C / FQPF9N25CT
3.29
62.5
Unit
°C / W
?2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
1
www.fairchildsemi.com
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| FQPF9N25CT | 功能描述:MOSFET N-CH/250V/9A/QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQPF9N25CYDTU | 功能描述:MOSFET 250V 8.8A N-Chan RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQPF9N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQPF9N50 | 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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