参数资料
型号: FQPF9N90CT
厂商: Fairchild Semiconductor
文件页数: 8/10页
文件大小: 0K
描述: MOSFET N-CH 900V 8A TO-220F
产品目录绘图: MOSFET TO-220F
标准包装: 50
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 900V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.4 欧姆 @ 4A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 58nC @ 10V
输入电容 (Ciss) @ Vds: 2730pF @ 25V
功率 - 最大: 68W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
产品目录页面: 1608 (CN2011-ZH PDF)
Mechanical Dimensions
Figure 1 6 . TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
?2003 Fairchild Semiconductor Corporation
FQP9N90C / FQPF9N90C Rev. C1
8
www.fairchildsemi.com
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