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参数资料
| 型号： | FQT7N10TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 1.7A SOT-223 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 850mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FQT7N10TFDKR |
March 2013
FQT7N10
N -Channel QFET ? MOSFET
10 0 V, 1.7 A, 35 0 m Ω
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor ? ’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
Features
? 1.7 A, 10 0 V, R DS(on) = 35 0 mΩ(Max.) @V GS =10 V, I D = 0.85 A
? Low G ate C harge ( Typ. 5 .8 nC)
? Low Crss ( Typ. 1 0 pF)
? 100% A valanche T ested
D
!
D
"
S
G !
! "
"
"
G
Absolute Maximum Ratings
SOT-223
T C = 25°C unless otherwise noted
!
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQT7N10
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 70°C)
1.7
1.36
A
A
I DM
Drain Current
- Pulsed
(Note 1)
6.8
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
50
1.7
0.2
6.0
2.0
0.016
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
62.5
Unit
°C / W
* When mounted on the minimum pad size recommended (PCB Mount)
?2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
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