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参数资料
| 型号： | FQU10N20LTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 7.6A IPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 70 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 3.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 830pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQ D 1 0 N 2 0L TM
Top Mark
FQ D 1 0 N 2 0L
Package
D PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 200 V, V GS = 0 V
V DS = 160 V, T C = 125°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
200
--
--
--
--
--
--
0.18
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 3.8 A
V GS = 5 V, I D = 3.8 A
V DS = 30 V, I D = 3.8 A
1.0
--
--
--
0.29
0.3
9.6
2.0
0.36
0.38
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
640
95
14
830
125
18
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 100 V, I D = 10 A,
R G = 25 ?
V DS = 160 V, I D = 10 A,
V GS = 5 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
13
150
50
95
13
2.4
6.1
35
310
110
200
17
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
7.6
30.4
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 7.6 A
V GS = 0 V, I S = 10 A,
dI F / dt = 100 A/ μ s
--
--
--
--
120
0.57
1.5
--
--
V
ns
μ C
Notes:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 4.7 mH, I AS = 7.6 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 10 A, di/dt ≤ 300 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature .
?2000 Fairchild Semiconductor Corporation
FQD10N20L Rev. C 1
2
www.fairchildsemi.com
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