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| 型号： | FQU7P06TU_NB82048 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 5.4A IPAK |
| 标准包装： | 70 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 451 毫欧 @ 2.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 295pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
April 2013
FQD7P06
P-Channel QFET ? MOSFET
- 60 V, - 5.4 A, 450 m ?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
Features
? - 5.4 A, - 60 V, R DS(on) = 450 m ? (Max.) @ V GS = - 10 V,
I D = - 2.7 A
? Low Gate Charge (Typ. 6.3 nC)
? Low Crss (Typ. 25 pF)
? 100% Avalanche Tested
audio amplifier, DC motor control, and variable switching
power applications.
S
G
D
G ?
?
●
●
? ▲
●
S
D-PAK
?
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD7P06
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-5.4
-3.42
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-21.6
A
V GSS
Gate-Source Voltage
? 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
90
-5.4
2.8
-7.0
2.5
28
0.22
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R ? JC
R ? JA
R ? JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
FQD7P06
4.5
50
110
Unit
°C / W
°C / W
°C / W
* When mounted on the minimum pad size recommended (PCB Mount)
?2001 Fairchild Semiconductor Corporation
FQD7P06 Rev. C0
1
www.fairchildsemi.com
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