参数资料
型号: FRA801G
厂商: Taiwan Semiconductor Co., Ltd.
英文描述: 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
中文描述: 8.0安培。玻璃钝化快恢复二极管
文件页数: 1/2页
文件大小: 54K
代理商: FRA801G
- 452 -
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
PIN 1
PIN 2
Case Positive
CASE
FRA801G THRU FRA807G
8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
℃/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
TO-220A
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRA
801G
FRA
802G
FRA
803G
FRA
804G
FRA
805G
FRA
806G
FRA
807G
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
@TC = 55
I(AV)
8.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Maximum Instantaneous Forward Voltage @ 8.0A
VF
1.3
V
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
IR
5.0
100
uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25
Cj
60
pF
Typical Thermal Resistance (Note 3)
R
θJC
3.0
℃/W
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate
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参数描述
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