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参数资料
| 型号： | FRM9140H |
| 厂商： | INTERSIL CORP |
| 元件分类： | JFETs |
| 英文描述： | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 11 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件页数： | 1/6页 |
| 文件大小： | 47K |
| 代理商： | FRM9140H |
4-1
FRM9140D, FRM9140R,
FRM9140H
11A, -100V, 0.300 Ohm, Rad Hard,
P-Channel Power MOSFETs
File Number
3241.1
Package
TO-204AA
Symbol
Features
11A, -100V, RDS(on) = 0.300
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specications to 100KRAD(Si)
- Dened End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
Photo Current
- 3.0nA Per-RAD(Si)/sec Typically
Neutron
- Pre-RAD Specications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Description
Intersil has designed a series of SECOND GENERATION hardened power MOS-
FETs of both N and P channel enhancement types with ratings from 100V to 500V,
1A to 60A, and on resistance as low as 25m
. Total dose hardness is offered at
100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2
for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power eld effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specied
FRM9140D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-100
V
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
11
7
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
33
A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125
50
1.0
W
W/oC
Inductive Current, Clamped, L = 100
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
33
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
11
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
33
A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
-55 to +150
oC
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
Intersil Corporation 1999
相关PDF资料 |
PDF描述 |
|---|---|
| FRM9140R | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230D | 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230H | 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230R | 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9240D | 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FRM9140R | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230D | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230H | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230R | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9240D | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs |
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