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参数资料
| 型号： | FS6S1265RBSYDTU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 稳压器 |
| 英文描述： | 48 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PZFM5 |
| 封装： | TO-3P, 5 PIN |
| 文件页数： | 9/15页 |
| 文件大小： | 253K |
| 代理商： | FS6S1265RBSYDTU |
FS6S-SERIES FS6S0965RT/FS6S1265RB
3
Electrical Characteristics (SenseFET Part)
(Ta = 25
°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
FS6S0965RT
Drain Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 50
A
650
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max., Rating, VGS=0V
-
200
A
VDS= 0.8Max., Rating,
VGS = 0V, TC = 125
°C
-
300
A
Static Drain-Source On Resistance (1)
RDS(on)
VGS = 10V, ID = 4.5A
-
1.1
1.2
Forward Transconductance(1)
gfs
VDS = 50V, ID = 4.5A
-
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V,
f = 1MHz
-
1300
-
pF
Output Capacitance
Coss
-
135
-
Reverse Transfer Capacitance
Crss
-
25
-
Turn On Delay Time
td(on)
VDD = 0.5BVDSS, ID = 9.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-25
-
nS
Rise Time
tr
-
75
-
Turn Off Delay Time
td(off)
-
130
-
Fall Time
tf
-
70
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS = 10V, ID = 9.0A,
VDS = 0.5BVDSS(MOSFET
switching time is
essentially independent of
operating temperature)
-45
-
nC
Gate-Source Charge
Qgs
-
8
-
Gate-Drain (Miller) Charge
Qgd
-
22
-
FS6S1265RB
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 50
A
650
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max, Rating, VGS = 0V
-
200
A
VDS= 0.8Max, Rating,
VGS = 0V, TC = 125
°C
-
300
A
Static Drain-Source on Resistance (1)
RDS(on)
VGS = 10V, ID = 4.5A
-
0.7
0.9
Forward Transconductance(1)
gfs
VDS = 50V, ID = 4.5A
-
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V,
f = 1MHz
-
1820
-
pF
Output Capacitance
Coss
-
185
-
Reverse Transfer Capacitance
Crss
-
32
-
Turn On Delay Time
td(on)
VDD = 0.5BVDSS, ID = 12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-38
-
nS
Rise Time
tr
-
120
-
Turn Off Delay Time
td(off)
-
200
-
Fall Time
tf
-
100
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS = 10V, ID = 12.0A,
VDS = 0.5BVDSS(MOSFET
switching time are
essentially independent of
operating temperature)
-60
-
nC
Gate-Source Charge
Qgs
-
10
-
Gate-Drain (Miller) Charge
Qgd
-
30
-
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