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| 型号： | FSA3157P6X |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/11页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH MULTIMEDIA SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 1 x SPDT |
| 导通状态电阻： | 50 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.65 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1219 (CN2011-ZH PDF) |
| 其它名称： | FSA3157P6XDKR |
NC7SB3157,
FSA3157
—
Low-V
olt
age
SPDT
Analo
g
Switch
or
2:1
Multip
lexer
/De-multipl
exer
Bu
sSwitch
2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
NC7SB3157, FSA3157 Rev. 1.0.4
4
DC Electrical Characteristics
Notes:
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is
determined by the lower of the voltages on the two (A or B Ports).
4. Parameter is characterized, but not tested in production.
5.
ΔRON = RON max – RON minimum measured at identical VCC, temperature, and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of on resistance over the specified
range of conditions.
7. Guaranteed by design.
Symbol
Parameter
Conditions
VCC (V)
TA = +25°C
TA = –40°C to
+85°C
Units
Min.
Typ.
Max.
Min.
Max.
VIH
High Level
Input Voltage
1.65 – 1.95 0.75 VCC
0.75 VCC
V
2.3 – 5.5
0.7 VCC
VIL
Low Level
Input Voltage
1.65 – 1.95
0.25 VCC
V
2.3 – 5.5
0.3 VCC
IIN
Input Leakage
Current
0
≤ VIN ≤ 5.5V
0 – 5.5
±0.05
±0.1
±1
A
IOFF
Off State Leakage
Current
0
≤ A, B ≤ VCC
1.65 – 5.5
±0.05
±0.1
±1
A
RON
Switch On
Resistance(3)
VIN = 0V, IO = 30mA
4.5
3.0
7.0
Ω
VIN = 2.4V, IO = –30mA
5.0
12.0
VIN = 4.5V, IO = –30mA
7.0
15.0
VIN = 0V, IO = 24mA
3.0
4.0
9.0
VIN = 3V, IO = –24mA
10.0
20.0
VIN = 0V, IO = 8mA
2.3
5.0
12.0
VIN = 2.3V, IO = –8mA
13.0
30.0
VIN = 0V, IO = 4mA
1.65
6.5
20.0
VIN = 1.65V, IO = –4mA
17.0
50.0
ICC
Quiescent Supply
Current;
All Channels On or
Off
VIN = VCC or GND IOUT = 0
5.5
1
10
A
Analog Signal
Range
VCC
0VCC
V
RRANGE
On Resistance Over
IA = –30mA, 0 ≤ VBn ≤ VCC
4.5
25.0
Ω
IA = –24mA, 0 ≤ VBn ≤ VCC
3.0
50.0
IA = –8mA, 0 ≤ VBn ≤ VCC
2.3
100
IA = –4mA, 0 ≤ VBn ≤ VCC
1.65
300
ΔRON
On Resistance
Match Between-
IA = –30mA, VBn = 3.15
4.5
0.15
Ω
IA = –24mA, VBn 2.1
3.0
0.2
IA = –8mA, VBn = 1.6
2.3
0.5
IA = –4mA, VBn = 1.15
1.65
0.50
Rflat
On Resistance
IA = –30mA, 0 ≤ VBn ≤ VCC
5.0
6.0
Ω
IA = –24mA, 0 ≤ VBn ≤ VCC
3.3
12.0
IA = –8mA, 0 ≤ VBn ≤ VCC
2.5
28.0
IA = –4mA, 0 ≤ VBn ≤ VCC
1.8
125
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