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参数资料
| 型号： | FSAM15SM60A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | SMART POWER MODULE 15A SPM32-AA |
| 产品培训模块： | Smart Power |
| 标准包装： | 8 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | 32-模块 |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
| 其它名称： | FSAM15SM60A_NL FSAM15SM60A_NL-ND |
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
V CC(L)
COM (L)
IN (UL)
IN (VL)
IN (WL)
COM (L)
V FO
C FOD
C SC
R SC
IN (UH)
V CC(UH)
V B(U)
V S(U)
IN (VH)
COM (H)
V CC(VH)
V B(V)
V S(V)
IN (WH)
V CC(WH)
V B(W)
V S(W)
V TH
R TH
N U
N V
N W
U
V
W
P
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving
Low-Side Common Supply Ground
Signal Input Terminal for Low-Side U-Phase
Signal Input Terminal for Low-Side V-Phase
Signal Input Terminal for Low-Side W-Phase
Low-Side Common Supply Ground
Fault Output
Capacitor for Fault Output Duration Selection
Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
Resistor for Short-Circuit Current Detection
Signal Input for High-Side U-Phase
High-Side Bias Voltage for U-Phase IC
High-Side Bias Voltage for U-Phase IGBT Driving
High-SideBias Voltage Ground for U-Phase IGBT Driving
Signal Input for High-Side V-Phase
High-Side Common Supply Ground
High-Side Bias Voltage for V-Phase IC
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
Signal Input for High-side W-Phase
High-Side Bias Voltage for W-Phase IC
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for W-Phase IGBT Driving
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Negative DC-Link Input Terminal for U-Phase
Negative DC-Link Input Terminal for V-Phase
Negative DC-Link Input Terminal for W-Phase
Output for U-Phase
Output for V-Phase
Output for W-Phase
Positive DC-Link Input
?2003 Fairchild Semiconductor Corporation
FSAM15SM60A Rev. C8
3
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FSAM20SH60A | SMART POWER MODULE 20A SPM32-AA |
| FSAM20SM60A | SMART POWER MODULE 20A SPM32-AA |
| FSAM30SH60A | SMART POWER MODULE 30A SPM32-AA |
| FSAM30SM60A | SMART POWER MODULE 30A SPM32-AA |
| FSAM50SM60A | IC SMART PWR MODULE SPM32-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSAM20S160 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FSAM20SH60A | 功能描述:IGBT 晶体管 600V/20A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM20SH60A_03 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM20SL60 | 功能描述:IGBT 晶体管 600V 20A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM20SM60A | 功能描述:IGBT 晶体管 600V/20A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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