参数资料
型号: FSAM20SM60A
厂商: Fairchild Semiconductor
文件页数: 6/15页
文件大小: 0K
描述: SMART POWER MODULE 20A SPM32-AA
产品培训模块: Smart Power
标准包装: 8
系列: SPM™
类型: IGBT
配置: 3 相
电流: 20A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: SPM32AA
配用: FEB156-ND - BOARD EVAL FOR FSAM20SM60A
其它名称: FSAM20SM60A-ND
FSAM20SM60AFS
FSAM20SM60A_NL
FSAM20SM60A_NL-ND
Electrical Characteristics
Inverter Part (T J = 25°C, unless otherwise specified.)
Item
Collector - Emitter
Saturation Voltage
Symbol
V CE(SAT) V CC = V BS = 15 V
V IN = 0 V
Condition
I C = 20 A, T J = 25°C
I C = 20 A, T J = 125°C
Min.
-
-
Typ.
-
-
Max.
2.30
2.40
Unit
V
V
FWDi Forward Voltage
V FM
V IN = 5 V
I C = 20 A, T J = 25°C
-
-
2.50
V
I C = 20 A, T J = 125°C
-
-
2.30
V
Switching Times
Collector - Emitter
t ON
t C(ON)
t OFF
t C(OFF)
t rr
I CES
V PN = 300 V, V CC = V BS = 15 V
I C = 20 A, T J = 25°C
V IN = 5 V ? 0V, Inductive Load
(High, Low-side)
(2nd Note 4)
V CE = V CES , T J = 25°C
-
-
-
-
-
-
0.35
0.16
0.88
0.35
0.13
-
-
-
-
-
-
250
? s
? s
? s
? s
? s
? A
Leakage Current
2nd Notes:
4. t ON and t OFF include the propagation delay time of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Figure 4.
t rr
100% I C
V CE
V IN
I C
V IN
I C
V CE
V IN(ON)
t ON
t C(ON)
90% I C
t OFF
t C(OFF)
10% I C
10% V CE
V IN(OFF)
10% V CE
10% I C
(a) Turn-on
Figure 4. Switching Time Definition
(b) Turn-off
?2003 Fairchild Semiconductor Corporation
FSAM20SM60A Rev. C8
6
www.fairchildsemi.com
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