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参数资料
| 型号： | FSB32560 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/14页 |
| 文件大小： | 0K |
| 描述： | MODULE SPM 600V 25A 27SPMBA |
| 产品变化通告： | Wire Change 06/June/2007 |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 25A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27BA |
Absolute Maximum Ratings (T J = 25°C,
Inverter Part
unless otherwise specified.)
Symbol
V PN
V PN(Surge)
V CES
± I C
P C
T J
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Collector Dissipation
Operating Junction Temperature
Conditions
Applied between P- N U , N V , N W
Applied between P- N U , N V , N W
T C = 25°C
T C = 100°C
T C = 25°C per Chip
(2nd Note 1)
Rating
450
500
600
25
12
29
-20 ~ 125
Unit
V
V
V
A
A
W
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM ? 3 product is 150 ? C (at T C ? 100 ? C). However, to insure safe operation of the
Motion SPM 3 product, the average junction temperature should be limited to T J(ave) ? 125 ? C (at T C ? 100 ? C)
Control Part
Symbol
V CC
Parameter
Control Supply Voltage
Conditions
Applied between V CC(UH) , V CC(VH) , V CC(WH) , V CC(L) -
Rating
20
Unit
V
COM
V BS
High-Side Control Bias
Applied between V B(U) - V S(U) , V B(V) - V S(V) , V B(W) -
20
V
Voltage
V S(W)
V IN
Input Signal Voltage
Applied between IN (UH) , IN (VH) , IN (WH) , IN (UL) , IN (VL) ,
-0.3 ~ 17
V
IN (WL) - COM
V FO
I FO
Fault Output Supply Voltage
Fault Output Current
Applied between V FO - COM
Sink Current at V FO Pin
-0.3 ~ V CC +0.3
5
V
mA
V SC
Current-Sensing Input Voltage Applied between C SC - COM
-0.3 ~ V CC +0.3
V
Total System
Symbol
V PN(PROT)
T C
T STG
V ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V CC = V BS = 13.5 ~ 16.5 V
T J = 125°C, Non-Repetitive, < 2 ? s
-20 ? C ?? T J ? 125 ? C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Rating
400
-20 ~ 100
-40 ~ 125
2500
Unit
V
°C
°C
V rms
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Parameter
Condition
Min.
Typ. Max.
Unit
R th(j-c)Q
R th(j-c)F
Junction to Case Thermal
Resistance
Inverter IGBT Part (per 1 / 6 module)
Inverter FWD Part (per 1 / 6 module)
-
-
-
-
3.5
4.7
°C/W
°C/W
2nd Notes:
2. For the measurement point of case temperature(T C ), please refer to Figure 2.
?2006 Fairchild Semiconductor Corporation
FSB32560 Rev. C3
5
www.fairchildsemi.com
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