参数资料
型号: FSB50550UTD
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 运动控制电子
英文描述: AC MOTOR CONTROLLER, PDIP23
封装: SPM-23
文件页数: 1/9页
文件大小: 893K
代理商: FSB50550UTD
2010 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSB50550UTD Rev. A
F
S
B
5
0
55
0
U
T
D
S
m
a
rt
P
o
w
e
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M
o
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(S
P
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Motion-SPM
April 2010
TM
FSB50550UTD
Smart Power Module (SPM)
Features
500V RDS(on)=1.4W(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
3 divided negative dc-link terminals for inverter current sens-
ing applications
HVIC for gate driving and undervoltage protection
3/5V CMOS/TTL compatible, active-high interface
Optimized for low electromagnetic interference
Isolation voltage rating of 1500Vrms for 1min.
Extended VB pin for PCB isolatio
Embedded bootstrap diode in the package
General Description
FSB50550UTD is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and
3
half-bridge
HVICs
for
FRFET
gate
driving.
FSB50550UTD provides low electromagnetic interference (EMI)
characteristics with optimized switching speed. Moreover, since
it employs FRFET as a power switch, it has much better
ruggedness and larger safe operation area (SOA) than that of
an IGBT-based power module or one-chip solution. The
package is optimized for the thermal performance and
compactness for the use in the built-in motor application and
any other application where the assembly space is concerned.
FSB50550UTD is the most solution for the compact inverter
providing the energy efficiency, compactness, and low
electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
500
V
ID25
Each FRFET Drain Current, Continuous
TC = 25°C
2.0
A
ID80
Each FRFET Drain Current, Continuous
TC = 80°C
1.5
A
IDP
Each FRFET Drain Current, Peak
TC = 25°C, PW < 100ms
5
A
PD
Maximum Power Dissipation
TC = 25°C, Each FRFET
14.5
W
VCC
Control Supply Voltage
Applied between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied between VB(U)-U, VB(V)-V, VB(W)-W
20
V
VIN
Input Signal Voltage
Applied between IN and COM
-0.3 ~ VCC+0.3
V
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-40 ~ 125
°C
RqJC
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
8.6
°C/W
VISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Vrms
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