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参数资料
| 型号： | FSBH0F70ANY_F116 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 稳压器 |
| 英文描述： | 0.83 A SWITCHING CONTROLLER, 106 kHz SWITCHING FREQ-MAX, DIP8 |
| 封装： | GREEN, MS-001BA, DIP-8 |
| 文件页数： | 11/16页 |
| 文件大小： | 938K |
| 代理商： | FSBH0F70ANY_F116 |
2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSBH0F70A_F116, FSBH0170/0270/0370_F116 Rev. 1.0.1
4
FSBH0F70A_F116,
F
S
BH0170/
0270/
0370_F116
—
Green
Mode
Fairch
ild
Power
Switch
(FPS)
Pin Configuration
Figure 4.
Pin Configuration and Top Mark Information
Pin Definitions
Pin #
Name
Description
1
GND
Ground
. SenseFET source terminal on primary side and internal controller ground.
2
VDD
Power Supply
. The internal protection circuit disables PWM output as long as VDD exceeds the
OVP trigger point.
3
FB
Feedback
. The signal from the external compensation circuit is fed into this pin. The PWM duty
cycle is determined in response to the signal on this pin and the internal current-sense signal.
4
VIN
Line-Voltage Detection
. The line-voltage detection is used for brownout protection with
hysteresis and constant output power limit over universal AC input range. This pin has additional
protections that are pull-HIGH latch and pull-LOW auto recovery, depending on the application.
NC
No Connection
. FSBH0F70A_F116
5
HV
Startup
. For startup, this pin is pulled HIGH to the line input or bulk capacitor via resistors.
6
Drain
SenseFET Drain
. High-voltage power SenseFET drain connection.
7
Drain
SenseFET Drain
. High-voltage power SenseFET drain connection.
8
Drain
SenseFET Drain
. High-voltage power SenseFET drain connection.
F – Fairchild Logo
Z – Plant Code
X – 1-Digit Year Code
Y – 1-Digit Week Code
TT – 2-Digit Die-Run Code
T – Package Type (N:DIP)
P – Y: Green Package
M – Manufacture Flow Code
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBH0F70WA | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Green Mode Fairchild Power Switch (FPSa?￠) |
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| FS-BLUE | 制造商:Vastech Inc 功能描述:LED STRIP,FLEXIBLE,BLUE,96 LED,12V@640mA,427nm,96cm,750*96mc |
| FSBM10SH60 | 功能描述:IGBT 晶体管 600V 10A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBM10SH60A | 功能描述:IGBT 晶体管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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