参数资料
型号: FSBS5CH60
厂商: Fairchild Semiconductor
文件页数: 6/14页
文件大小: 0K
描述: SMART POWER MODULE 5A SPM27-BA
产品变化通告: Wire Change 06/June/2007
标准包装: 10
系列: SPM™
类型: IGBT
配置: 3 相
电流: 5A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: SPM27BA
其它名称: FSBS5CH60_NL
FSBS5CH60_NL-ND
Electrical Characteristics (T J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V CE(SAT)
Collector - Emitter
V CC = V BS = 15 V
I C = 5 A, T J = 25°C
-
-
2.3
V
Saturation Voltage
V IN = 5 V
V F
FWDi Forward Voltage
V IN = 0 V
I C = 5 A, T J = 25°C
-
-
2.1
V
HS
t ON
t C(ON)
t OFF
Switching Times
V PN = 300 V, V CC = V BS = 15 V
I C = 5 A
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
-
-
-
0.40
0.21
0.68
-
-
-
? s
? s
? s
t C(OFF)
t rr
-
-
0.25
0.10
-
-
? s
? s
LS
t ON
t C(ON)
t OFF
t C(OFF)
t rr
V PN = 300 V, V CC = V BS = 15 V
I C = 5 A
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
-
-
-
-
-
0.56
0.28
0.72
0.25
0.10
-
-
-
-
-
? s
? s
? s
? s
? s
I CES
Collector - Emitter
V CE = V CES
-
-
250
? A
Leakage Current
2nd Notes:
3. t ON and t OFF include the propagation delay of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% I C 100% I C
t rr
V IN
t ON
V CE
t C(ON)
I C
V IN
t OFF
I C
t C(OFF)
V CE
V IN(ON)
10% I C 90% I C 10% V CE
V IN(OFF)
10% V CE
10% I C
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
?2006 Fairchild Semiconductor Corporation
FSBS5CH60 Rev. C6
6
www.fairchildsemi.com
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