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参数资料
| 型号： | FSFR1800HSL |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | IC FPS HALF BRIDGE RES CONV 9SIP |
| 标准包装： | 19 |
| 系列： | FPS™ |
| 输出隔离： | 隔离 |
| 频率范围： | 47kHz ~ 53kHz |
| 输入电压： | 9.6 V ~ 25 V |
| 输出电压： | 500V |
| 功率（瓦特）： | 260W |
| 工作温度： | -40°C ~ 130°C |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Symbol
V DS
LV CC
Parameter
Maximum Drain-to-Source Voltage (DL-CTR and CTR-PG)
Low-Side Supply Voltage
Min.
500
-0.3
Max.
25.0
Unit
V
V
HV CC to CTR High-Side V CC Pin to Low-Side Drain Voltage
-0.3
25.0
V
HV CC
V RT
V LS
V CS
f sw
dV CTR /dt
High-Side Floating Supply Voltage
Timing Resistor Connecting and Auto-Restart Pin Voltage
Line Sensing Input Voltage
Current Sense (CS) Pin Input Voltage
Recommended Switching Frequency
Allowable Low-Side MOSFET Drain Voltage Slew Rate
-0.3
-0.3
-0.3
-5
10
525.0
5.0
LV CC
1
600
50
V
V
V
V
kHz
V/ns
P D
Total Power Dissipation (4)
FSFR1800HS/L
FSFR1700HS/L
11.7
11.6
W
T J
T STG
Maximum Junction Temperature (5)
Recommended Operating Junction Temperature
Storage Temperature Range
(5)
-40
-55
+150
+130
+150
° C
° C
MOSFET Section
V DGR
V GS
Drain Gate Voltage (R GS =1 M Ω )
Gate Source (GND) Voltage
500
±30
V
V
I DM
Drain Current Pulsed (6)
FSFR1800HS/L
FSFR1700HS/L
23
20
A
I D
Continuous Drain Current
FSFR1800HS/L
FSFR1700HS/L
T C =25°C
T C =100°C
T C =25°C
T C =100°C
7.0
4.5
6.0
3.9
A
Package Section
Torque
Recommended Screw Torque
5~7
kgf·cm
Notes:
3. These parameters, although guaranteed, are tested only in EDS (wafer test) process.
4. Per MOSFET when both MOSFETs are conducting.
5. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
6. Pulse width is limited by maximum junction temperature.
Thermal Impedance
T A =25°C unless otherwise specified.
Symbol
Parameter
Value
Unit
θ JC
θ JA
Junction-to-Case Center Thermal Impedance
(Both MOSFETs Conducting)
Junction-to-Ambient Thermal Impedance
FSFR1800HS/L
FSFR1700HS/L
FSFR1800HS/L
FSFR1700HS/L
10.7
10.8
80
oC/W
oC/W
? 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS ? Rev.1.0.1
4
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FSFR1800L | 功能描述:功率驱动器IC HIGH POWER FPS RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FSFR1800S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FSFR1800US | 功能描述:电源开关 IC - 配电 HIGH POWER FPS RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FSFR1800USL | 功能描述:电源开关 IC - 配电 260W Powr Switch for Half Brdg Res Cnvtr RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FSFR1800XS | 功能描述:功率驱动器IC 260W Fairchild PwrSW RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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