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参数资料
| 型号： | FSFR2100 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | IC SWIT PROG OVP OCP 9SIP |
| 标准包装： | 19 |
| 输出隔离： | 隔离 |
| 频率范围： | 94kHz ~ 106kHz |
| 输入电压： | 9.6 V ~ 25 V |
| 输出电压： | 500V |
| 功率（瓦特）： | 400W |
| 工作温度： | -40°C ~ 130°C |
| 封装/外壳： | 9-SIP |
| 供应商设备封装： | 9-SIP |
| 包装： | 管件 |
| 产品目录页面： | 1219 (CN2011-ZH PDF) |
| 配用： | FEB212-ND - BOARD EVAL FOR FSFR2100 |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. T A =25 ? C unless otherwise specified.
Symbol
V DS
LV CC
Parameter
Maximum Drain-to-Source Voltage (V DL -V CTR and V CTR -PG)
Low-Side Supply Voltage
Min.
600
-0.3
Max.
25.0
Unit
V
V
HV CC to V CTR High-Side V CC Pin to Low-side Drain Voltage
-0.3
25.0
V
Total Power Dissipation
HV CC
V CON
V CS
V RT
dV CTR /dt
P D
T J
T STG
High-Side Floating Supply Voltage
Control Pin Input Voltage
Current Sense (CS) Pin Input Voltage
R T Pin Input Voltage
Allowable Low-Side MOSFET Drain Voltage Slew Rate
(3)
Maximum Junction Temperature (4)
Recommended Operating Junction Temperature (4)
Storage Temperature Range
-0.3
-0.3
-5.0
-0.3
-40
-55
625.0
LV CC
1.0
5.0
50
12
+150
+130
+150
V
V
V
V
V/ns
W
? C
? C
MOSFET Section
Drain Current Pulsed
V DGR
V GS
I DM
Drain Gate Voltage (R GS =1 M ? )
Gate Source (GND) Voltage
(5)
600
±30
33
V
V
A
I D
Continuous Drain Current
T C =25 ? C
T C =100 ? C
11
7
A
Package Section
Torque
Recommended Screw Torque
5~7
kgf·cm
Notes:
3. Per MOSFET when both MOSFETs are conducting.
4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
5. Pulse width is limited by maximum junction temperature.
Thermal Impedance
T A =25 ? C unless otherwise specified.
Symbol
θ JC
θ JA
Parameter
Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting)
Junction-to-Ambient Thermal Impedance
Value
10.44
80
Unit
oC/W
oC/W
? 2010 Fairchild Semiconductor Corporation
FSFR2100 ? Rev.1.1.0
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSFR2100 | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SWITCH IC |
| FSFR2100_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Power Switch (FPS⑩) for Half-Bridge Resonant Converters |
| FSFR2100U | 功能描述:开关变换器、稳压器与控制器 High power FPS 450W RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| FSFR2100U_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Fairchild Power Switch (FPS) for Half-Bridge Resonant Converters |
| FSFR2100US | 功能描述:开关变换器、稳压器与控制器 HIGH POWER FPS RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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