参数资料
型号: FSGM0465RLDTU
厂商: Fairchild Semiconductor
文件页数: 12/19页
文件大小: 0K
描述: IC PWM/SENSEFET SMPS TO-220F-6L
标准包装: 400
系列: FPS™
输出隔离: 隔离
频率范围: 60kHz ~ 72kHz
输入电压: 13 V ~ 23 V
输出电压: 650V
功率(瓦特): 70W
工作温度: -40°C ~ 125°C
封装/外壳: TO-220FL
供应商设备封装: TO-220F-6L(L 型)
包装: 管件
4.3. Output-Short Protection (OSP) : If the output is
shorted, steep current with extremely high di/dt can
flow through the SenseFET during the minimum turn-
on time. Such a steep current brings high-voltage
stress on the drain of the SenseFET when turned off.
To protect the device from this abnormal condition,
OSP is included. It is comprised of detecting V FB and
SenseFET turn-on time. When the V FB is higher than
2V and the SenseFET turn-on time is lower than
1.2 μ s, the FSGM0465R recognizes this condition as
an abnormal error and shuts down PWM switching
until V CC reaches V START again. An abnormal condition
output short is shown in Figure 22.
4.5 Thermal Shutdown (TSD) : The SenseFET and
the control IC on a die in one package makes it easier
for the control IC to detect the over temperature of the
SenseFET. If the temperature exceeds ~140 ° C, the
thermal shutdown is triggered and the FSGM0465R
stops operation. The FSGM0465R operates in auto-
restart mode until the temperature decreases to
around 110 ° C, when normal operation resumes.
5. Soft Burst-Mode Operation : To minimize power
dissipation in standby mode, the FSGM0465R enters
burst-mode operation. As the load decreases, the
feedback voltage decreases. As shown in Figure 23, the
device automatically enters burst mode when the
V FB*
MOSFET
Drain
Current
Rectifier
Diode
Current
I LIM
V FB* =0.5V
→ V FB =2.0V
feedback voltage drops below V BURL (500mV). At this
point, switching stops and the output voltages start to
drop at a rate dependent on standby current load. This
causes the feedback voltage to rise. Once it passes
I Lm
V BURH (700mV), switching resumes. At this point, the
drain current peak increases gradually. This soft burst-
0
t OFF t ON
output short occurs
1.2 μ s
1.2 μ s
t
mode can reduce audible noise during burst-mode
operation. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the SenseFET,
V OUT
I OUT
thereby reducing switching loss in standby mode.
0
OSP
0
OSP triggered
Figure 22. Output-Short Protection
t
t
V O
V FB
t
4.4 Over-Voltage Protection (OVP): If the
secondary-side feedback circuit malfunctions or a
solder defect causes an opening in the feedback path,
the current through the opto-coupler transistor
becomes almost zero. Then V FB climbs up in a similar
manner to the overload situation, forcing the preset
0.70V
0.50V
I DS
Soft Burst
t
maximum current to be supplied to the SMPS until the
overload protection is triggered. Because more energy
than required is provided to the output, the output
voltage may exceed the rated voltage before the
overload protection is triggered, resulting in the
breakdown of the devices in the secondary side. To
prevent this situation, an OVP circuit is employed. In
V DS
t
general, the V CC is proportional to the output voltage
and the FSGM0465R uses V CC instead of directly
monitoring the output voltage. If V CC exceeds 24.5V,
an OVP circuit is triggered, resulting in the termination
t1
Switching
disabled
t2 t3
Switching
disabled
t4
t
of the switching operation. To avoid undesired
activation of OVP during normal operation, V CC should
be designed to be below 24.5V.
? 2009 Fairchild Semiconductor Corporation
FSGM0465R ? Rev. 1.0.3
12
Figure 23. Burst-Mode Operation
www.fairchildsemi.com
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