参数资料
型号: FSGM0565RWDTU
厂商: Fairchild Semiconductor
文件页数: 9/18页
文件大小: 0K
描述: IC PWM/SENSEFET SMPS TO-220F-6W
标准包装: 400
系列: FPS™
输出隔离: 隔离
频率范围: 60kHz ~ 72kHz
输入电压: 13 V ~ 23 V
输出电压: 650V
功率(瓦特): 80W
工作温度: -40°C ~ 125°C
封装/外壳: TO-220FL
供应商设备封装: TO-220-6L(W 型)
包装: 管件
Functional Description
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (C Vcc ) connected to the V CC pin, as
illustrated in Figure 17. When V CC reaches 12V, the
FSGM0565R begins switching and the internal high-
voltage current source is disabled. The FSGM0565R
continues normal switching operation and the power is
supplied from the auxiliary transformer winding unless
V CC goes below the stop voltage of 7.5V.
Figure 17. Startup Block
2. Soft-Start : The FSGM0565R has an internal soft-
start circuit that increases PWM comparator inverting
input voltage, together with the SenseFET current,
slowly after it starts. The typical soft-start time is 15ms.
The pulse width to the power switching device is
progressively increased to establish the correct working
conditions for transformers, inductors, and capacitors.
3. Feedback Control : This device employs current-
mode control, as shown in Figure 18. An opto-coupler
(such as the FOD817) and shunt regulator (such as the
KA431) are typically used to implement the feedback
network. Comparing the feedback voltage with the
voltage across the R SENSE resistor makes it possible to
control the switching duty cycle. When the reference pin
voltage of the shunt regulator exceeds the internal
reference voltage of 2.5V, the opto-coupler LED current
increases, pulling down the feedback voltage and
reducing the drain current. This typically occurs when
the input voltage increases or the output load decreases.
3.1 Pulse-by-Pulse Current Limit : Because current-
mode control is employed, the peak current through
the SenseFET is limited by the inverting input of PWM
comparator (V FB *), as shown in Figure 18. Assuming
that the 210 μ A current source flows only through the
internal resistor (3R + R =11.6k ? ), the cathode
voltage of diode D2 is about 2.4V. Since D1 is
blocked when the feedback voltage (V FB ) exceeds
2.4V, the maximum voltage of the cathode of D2 is
clamped at this voltage. Therefore, the peak value of
the current through the SenseFET is limited.
3.2 Leading-Edge Blanking (LEB) : At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the
R SENSE resistor leads to incorrect feedback operation
in the current mode PWM control. To counter this
effect, the FSGM0565R employs a leading-edge
blanking (LEB) circuit. This circuit inhibits the PWM
comparator for t LEB (300ns) after the SenseFET is
turned on.
The voltage on the output capacitors is progressively
increased to smoothly establish the required output
voltage. This helps prevent transformer saturation and
reduces stress on the secondary diode during startup.
Figure 18. Pulse Width Modulation Circuit
? 2009 Fairchild Semiconductor Corporation
FSGM0565R ? Rev. 1.0.2
9
www.fairchildsemi.com
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