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参数资料
| 型号： | FSL116HR |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 稳压器 |
| 英文描述： | 1.24 A SWITCHING CONTROLLER, 110 kHz SWITCHING FREQ-MAX, DIP8 |
| 封装： | MS-001BA, DIP-8 |
| 文件页数： | 9/13页 |
| 文件大小： | 862K |
| 代理商： | FSL116HR |
2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSL116HR Rev. 1.0.0
5
FSL116HR
—
Green
M
ode
Fairchild
Power
Swit
ch
(
F
PS)
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
SenseFET Section
BVDSS
Drain-Source Breakdown Voltage
VCC = 0V, ID = 250A
650
V
IDSS
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
250
A
RDS(ON)
Drain-Source On-State Resistance
VGS = 10V, VGS = 0V, TC = 25°C
7.3
10.0
CISS
Input Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
135
pF
COSS
Output Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
21
pF
CRSS
Reverse Transfer Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
3.2
pF
td(ON)
Turn-On Delay
VDS = 350V, IDS = 1A
10
ns
tr
Rise Time
VDS = 350V, IDS = 1A
13.4
ns
td(OFF)
Turn-Off Delay
VDS = 350V, IDS = 1A
14.9
ns
tf
Fall Time
VDS = 350V, IDS = 1A
36.8
ns
Control Section
fOSC
Switching Frequency
VDS = 650V, VGS = 0V
90
100
110
KHz
fOSC
Switching Frequency Variation
VGS = 10V, VGS = 0V, TC = 125°C
±5
±10
%
fFM
Frequency Modulation
±3
KHz
DMAX
Maximum Duty Cycle
VFB = 4V
71
77
83
%
DMIN
Minimum Duty Cycle
VFB = 0V
0
%
VSTART
UVLO Threshold Voltage
11
12
13
V
VSTOP
After Turn-On
7
8
9
V
IFB
Feedback Source Current
VFB = 0V
320
400
480
A
tS/S
Internal Soft-Start Time
VFB = 4V
15
20
25
ms
Burst Mode Section
VBURH
Burst Mode Voltage
TJ = 25°C
0.56 0.70
0.84
V
VBURL
0.37 0.50
0.63
V
VBUR(HYS)
200
mV
Protection Section
ILIM
Peak Current Limit
TJ = 25°C, di/dt = 300mA/s
0.96 1.10
1.24
A
tCLD
Current Limit Delay Time
(11)
200
ns
VSD
Shutdown Feedback Voltage
VCC = 15V
5.5
6.0
6.5
V
IDELAY
Shutdown Delay Current
VFB = 5V
3.5
5.0
6.5
A
VOVP
Over-Voltage Protection Threshold
VFB = 2V
22.5 24.0
25.5
V
tOSP
Output-Short
Protection
(11)
Threshold Time
TJ = 25°C
OSP Triggered When tON<tOSP,
VFB>VOSP and Lasts Longer than
tOSP_FB
1.00
1.35
s
VOSP
Threshold Feedback
Voltage
1.44 1.60
V
tOSP_FB
Feedback Blanking
Time
2.0
2.5
s
VAOCP
AOCP Voltage
(11)
TJ = 25°C
0.85 1.00
1.15
V
TSD
Thermal
Shutdown
(11)
Shutdown Temperature
125
137
150
°C
HYSTSD
Hysteresis
60
°C
tLEB
Leading-Edge Blanking Time
(11)
300
ns
Continued on the following page…
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