参数资料
型号: FSQ0370RNA
厂商: Fairchild Semiconductor
文件页数: 9/17页
文件大小: 0K
描述: IC SWIT PWM GREEN OVP UVLO 8DIP
产品变化通告: Passivation Layer Change 07/Dec/2007
标准包装: 50
输出隔离: 隔离
频率范围: 92kHz ~ 108kHz
输入电压: 9 V ~ 20 V
输出电压: 700V
功率(瓦特): 27W
工作温度: 25°C ~ 140°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
产品目录页面: 1222 (CN2011-ZH PDF)
Functional Description
1. Startup: In previous generations of Fairchild Power
Switches (FPS?), the V str pin required an external
resistor to the DC input voltage line. In this generation,
the startup resistor is replaced by an internal high-
voltage current source and a switch that shuts off 10ms
after the supply voltage, V CC , goes above 12V. The
source turns back on if V CC drops below 8V.
V IN ,dc
I STR
V str
4. Protection Circuits: The FPS has several protective
functions, such as Overload Protection (OLP), Over-
Voltage Protection (OVP), Under-Voltage Lockout
(UVLO), and Thermal Shutdown (TSD). Because these
protection circuits are fully integrated in the IC without
external components, reliability is improved without
increasing cost. Once a fault condition occurs, switching
is terminated and the SenseFET remains off. This
causes V CC to fall. When V CC reaches the UVLO stop
voltage, V STOP (typically 8V), the protection is reset and
the internal high-voltage current source charges the V CC
capacitor via the V str pin. When V CC reaches the UVLO
start voltage, V START (typically 12V), the FPS resumes
V cc
V cc <8V
UVLO on
10ms after
V cc ≥ 12V
I CH
J-FET
its normal operation. In this manner, the auto-restart can
alternately enable and disable the switching of the power
SenseFET until the fault condition is eliminated.
UVLO off
FSQ0x70RNA Rev. 1.00
Figure 13. High-Voltage Current Source
2. Feedback Control: The 700V FPS series employs
current-mode control, as shown in Figure 14. An opto-
coupler (such as the H11A817A) and shunt regulator
(such as the KA431) are typically used to implement the
feedback network. Comparing the feedback voltage with
the voltage across the R sense resistor of SenseFET, plus
an offset voltage, makes it possible to control the
switching duty cycle. When the shunt regulator reference
pin voltage exceeds the internal reference voltage of
2.5V, the opto-coupler LED current increases, the
feedback voltage V FB is pulled down and thereby
reduces the duty cycle. This typically happens when the
input voltage increases or the output load decreases.
V CC V CC
5 ? A 900 ? A
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding a pre-set level due to an
unexpected event. In this situation, the protection circuit
should be activated to protect the SMPS. However, even
when the SMPS is operating normally, the OLP circuit
can be activated during the load transition. To avoid this
undesired operation, the OLP circuit is designed to be
activated after a specified time to determine whether it is
a transient situation or a true overload situation. In
conjunction with the I PK current limit pin (if used), the
current mode feedback path limits the current in the
SenseFET when the maximum PWM duty cycle is
attained. If the output consumes more than this
maximum power, the output voltage (V O ) decreases
below nominal voltage. This reduces the current through
the opto-coupler LED, which also reduces the opto-
coupler transistor current, thus increasing the feedback
voltage (V FB ). If V FB exceeds 3V, the feedback input
diode is blocked and the 5μA current source (I DELAY )
V O
431
FB
C FB
3
+
V FB
-
D1
D2
V FB,in
OSC
2.5R
R
Gate
driver
starts to slowly charge C FB up to V CC . In this condition,
V FB increases until it reaches 6V, when the switching
operation is terminated, as shown in Figure 15. The
shutdown delay time is the time required to charge C FB
from 3V to 6V with 5μA current source.
FSQ0x70RNA Rev. 1.00
V SD
OLP
V FB
6V
FSQ0x70RNA Rev.00
Overload Protection
Figure 14. Pulse Width Modulation Circuit
3. Leading Edge Blanking (LEB): When the internal
SenseFET is turned on, the primary-side capacitance
and secondary-side rectifier diode reverse recovery
typically cause a high-current spike through the
3V
t 12 = C FB × (V(t 2 )-V(t 1 )) / I DELAY
SenseFET. Excessive voltage across the R sense resistor
leads to incorrect feedback operation in the current-
mode PWM control. To counter this effect, the FPS
t 1
t 12 ? C FB
V ( t 2 ) ? V ( t 1 )
I DELAY
;
t 2
I DELAY ? 5 ? A , V ( t 1 ) ? 3 V , V ( t 2 ) ? 6 V
t
employs a Leading Edge Blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(t LEB ) after the Sense FET is turned on.
? 2006 Fairchild Semiconductor Corporation
FSQ0170RNA, FSQ0270RNA Rev. 1.0.5
9
Figure 15. Overload Protection (OLP)
4.2 Thermal Shutdown (TSD) : The SenseFET and the
control IC are integrated, making it easier for the control
www.fairchildsemi.com
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